AM29DL400BB-120SF AMD [Advanced Micro Devices], AM29DL400BB-120SF Datasheet - Page 41

• Manufacturer Part Number: AM29DL400BB-120SF
• Description: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Word Program Time
Chip Program Time
(Note 3)
conditions: 25
Additionally, programming typicals assume
checkerboard pattern.
1,000,000 cycles.
than the maximum chip programming time listed, since
most bytes program faster than the maximum program
times listed.
°
C, 3.0 V V
Word Mode
Byte Mode
CC
, 1,000,000 cycles.
Typ (Note 1)
CC
= 2.7 V,
0.7
4.5
2.9
10
11
9
Am29DL400B
Max (Note
13.5
300
360
8.7
2)
15
4. In the pre-programming step of the Embedded Erase
5. System-level overhead is the time required to execute
6. The device has a guaranteed minimum erase and program
algorithm, all bytes are programmed to 00h before
erasure.
the two- or four-bus-cycle sequence for the program
command. See Table 5 for further information on
command definitions.
cycle endurance of 1,000,000 cycles.
Unit
sec
sec
sec
µs
µs
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Comments
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