AM29DL640D120 AMD [Advanced Micro Devices], AM29DL640D120 Datasheet - Page 2

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AM29DL640D120

Manufacturer Part Number
AM29DL640D120
Description
64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
■ Flexible Bank
■ Boot Sectors
■ Manufactured on 0.23 µm process technology
■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte
■ Zero Power Operation
■ Compatible with JEDEC standards
PACKAGE OPTIONS
■ 63-ball Fine Pitch BGA
■ 48-pin TSOP
PERFORMANCE CHARACTERISTICS
■ High performance
Am29DL640D
64 Megabit (8 M x 8-Bit/4 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifica-
tions and ordering information. For new designs involving Fine-pitch BGA (FBGA) packages, S29PL064J supersedes Am29DL640D and is the factory-recommended migration path. Please
refer to the S29PL064J Datasheet for specifications and ordering information.
— Data can be continuously read from one bank while
— Zero latency between read and write operations
— Read may occur in any of the three banks not being
— Four banks may be grouped by customer to achieve
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
sector
— Factory locked and identifiable: 16 bytes available for
— Customer lockable: Can be read or programmed just
— Sophisticated power management circuits reduce
— Pinout and software compatible with
— Access time as fast as 90 ns
— Program time: 4 µs/word typical utilizing Accelerate
executing erase/program functions in another bank.
written or erased.
desired bank divisions.
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
like other sectors. Once locked, data cannot be
changed
power consumed during inactive periods to nearly
zero.
single-power-supply flash standard
function
TM
architecture
Refer to AMD’s Website (www.amd.com) for the latest information.
■ Ultra low power consumption (typical values)
■ Minimum 1 million erase cycles guaranteed per
■ 20 year data retention at 125°C
SOFTWARE FEATURES
■ Data Management Software (DMS)
■ Supports Common Flash Memory Interface (CFI)
■ Program/Erase Suspend/Erase Resume
■ Data# Polling and Toggle Bits
■ Unlock Bypass Program command
HARDWARE FEATURES
■ Ready/Busy# output (RY/BY#)
■ Hardware reset pin (RESET#)
■ WP#/ACC input pin
■ Sector protection
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
sector
— Reliable operation for the life of the system
— AMD-supplied software manages data programming,
— Eases historical sector erase flash limitations
— Suspends program/erase operations to allow
— Provides a software method of detecting the status of
— Reduces overall programming time when issuing
— Hardware method for detecting program or erase
— Hardware method of resetting the internal state
— Write protect (WP#) function protects sectors 0, 1,
— Acceleration (ACC) function accelerates program
— Hardware method of locking a sector, either
— Temporary Sector Unprotect allows changing data in
enabling EEPROM emulation
programming/erasing in same bank
program or erase cycles
multiple program command sequences
cycle completion
machine to the read mode
140, and 141, regardless of sector protect status
timing
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
protected sectors in-system
Publication# 23695
Issue Date: October 7, 2004
Rev: C Amendment/1

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