AM29DL640D120 AMD [Advanced Micro Devices], AM29DL640D120 Datasheet - Page 49

• Manufacturer Part Number: AM29DL640D120
• Description: 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 ° C, 3.0 V V
2. Under worst case conditions of 90 ° C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
48
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Accelerated Byte/Word Program Time
Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
12 for further information on command definitions.
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
Description
Control Pin Capacitance
Parameter Description
SS
SS
CC
Output Capacitance
Word Mode
Byte Mode
Input Capacitance
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 2.7 V, 1,000,000 cycles.
Typ (Note 1)
CC
Am29DL640D
= 3.0 V, one pin at a time.
100
0.7
42
28
5
4
7
Max (Note 2)
150
120
210
126
15
84
Test Setup
V
V
V
OUT
Test Conditions
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
150 ° C
125 ° C
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
µs
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
Typ
overhead (Note 5)
8.5
7.5
6
Comments
V
+100 mA
October 7, 2004
CC
12.5 V
Min
Max
10
20
Max
+ 1.0 V
7.5
12
9
Years
Years
Unit
Unit
pF
pF
pF