AM29F002N AMD [Advanced Micro Devices], AM29F002N Datasheet - Page 10

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AM29F002N

Manufacturer Part Number
AM29F002N
Description
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet

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Contact an AMD representative to obtain a copy of the
appropriate document.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Temporary Sector Unprotect
Note: This feature requites the RESET# pin and is
therefore not available on the Am29F002N.
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting the
RESET# pin to V
tected sectors can be programmed or erased by se-
lecting the sector addresses. Once V
from the RESET# pin, all the previously protected
sectors are protected again. Figure 1 shows the algo-
rithm, and the Temporary Sector Unprotect diagram
shows the timing waveforms, for this feature.
10
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
Figure 1. Temporary Sector Unprotect Operation
again.
ID
. During this mode, formerly pro-
Program Operations
Completed (Note 2)
Temporary Sector
Perform Erase or
RESET# = V
RESET# = V
Unprotect
(Note 1)
START
ID
IH
ID
is removed
Am29F002/Am29F002N
20818C-4
P R E L I M I N A R Y
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Defi-
nitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-
gramming, which might otherwise be caused by spuri-
ous system level signals during V
power-down transitions, or from system noise.
Low V
When V
cept any write cycles. This protects data during V
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
is greater than V
proper signals to the control pins to prevent uninten-
tional writes when V
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
IL
, CE# = V
CC
CC
Write Inhibit
is less than V
IH
or WE# = V
IL
LKO
and OE# = V
CC
. The system must provide the
is greater than V
LKO
IH
, the device does not ac-
. To initiate a write cycle,
IH
during power up, the
CC
power-up and
LKO
.
CC
CC

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