HY27SF161G2A HYNIX [Hynix Semiconductor], HY27SF161G2A Datasheet - Page 3

• Manufacturer Part Number: HY27SF161G2A
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

FEATURES SUMMARY
SUPPLY VOLTAGE
Memory Cell Array
= (2K+64) Bytes x 64 Pages x 1,024 Blocks
= (1K+32) Words x 64 Pages x 1,024 Blocks
PAGE SIZE
- x16 device : (1K+32 spare) Words
BLOCK SIZE
COPY BACK PROGRAM MODE
CACHE PROGRAM
- Internal (2048+64) Byte buffer to improve the program
Rev 0.3 / Nov. 2006
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
- VCC = 1.7 to 1.95V : HY27SFxx1G2A
- x8 device : (2K+64 spare) Bytes
- x8 device: (128K + 4K spare) Bytes
- x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
- Random access: 25us (max.)
- Sequential access: 50ns (min.)
- Page program time: 200us (typ.)
- Fast page copy without external buffering
throughput
: HY27SF081G2A
: HY27SF161G2A
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
FAST BLOCK ERASE
STATUS REGISTER
ELECTRONIC SIGNATURE
- 1st cycle: Manufacturer Code
- 2nd cycle: Device Code
- 3rd cycle: Internal chip number, Cell Type, Number of
- 4th cycle: Page size, Block size, Organization, Spare
SERIAL NUMBER OPTION
CHIP ENABLE DON’T CARE
DATA RETENTION
PACKAGE
- HY27SF081G2A-S(P)
- Block erase time: 2ms (Typ.)
- Simple interface with microcontroller
- 100,000 Program/Erase cycles (with 1bit/528byte ECC)
- 10 years Data Retention
- HY27SF(08/16)1G2A-T(P)
- HY27SF081G2A-F(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
: 48-Pin USOP1 (12 x 17 x 0.65 mm)
: 63-Ball FBGA (9 x 11 x 1.0 mm)
- HY27SF(08/16)1G2A-T (Lead)
- HY27SF(08/16)1G2A-TP (Lead Free)
- HY27SF081G2A-S (Lead)
- HY27SF081G2A-SP (Lead Free)
- HY27SF081G2A-F (Lead)
- HY27SF081G2A-FP (Lead Free)
Simultaneously Programmed Pages.
size
HY27SF(08/16)1G2A Series
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