AM29LV640MH SPANSION [SPANSION], AM29LV640MH Datasheet - Page 58

• Manufacturer Part Number: AM29LV640MH
• Description: 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
• Manufacturer: SPANSION [SPANSION]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following
2. Maximum values are measured at V
3. Word/Byte programming specification is based upon a
4. For 1-16 words or 1-32 bytes programmed in a single write
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP PIN AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
56
Parameter
Sector Erase Time
Chip Erase Time
Single Word/Byte Program Time (Note 3)
Accelerated Single Word/Byte Program Time
(Note 3)
Total Write Buffer Program Time (Note 4)
Effective Write Buffer Program Time (Note 5)
Total Accelerated Effective Write Buffer
Program Time (Note 4)
Effective Accelerated Write Buffer Program
Time (Note 4)
Chip Program Time, using the Write Buffer
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
Parameter Symbol
conditions: 25°C, 3.0 V V
assume that all bits are programmed to 00h.
temperature. Maximum values are valid up to and including
100,000 program/erase cycles.
single word/byte programming operation not utilizing the
write buffer.
buffer programming operation.
Current
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
CC
Description
SS
SS
. Programming specifications
Control Pin Capacitance
Parameter Description
CC
on all pins except I/O pins
on all I/O pins
Output Capacitance
. Test conditions: V
Input Capacitance
CC
= 3.0 V, worst case
Per Word
Per Word
Per Byte
Per Byte
Word
Word
Byte
Byte
D A T A S H E E T
CC
Am29LV640MH/L
= 3.0 V, one pin at a time.
Typ (Note 1)
17.6
100
100
352
282
0.5
8.8
64
90
90
11
22
92
V
5. Effective write buffer specification is calculated on a
6. In the pre-programming step of the Embedded Erase
7. System-level overhead is the time required to execute the
8. The device has a minimum erase and program cycle
V
V
OUT
IN
IN
per-word/per-byte basis for a 16-word/32-byte write buffer
operation.
algorithm, all bits are programmed to 00h before erasure.
command sequence(s) for the program command. See
Tables
definitions.
endurance of 100,000 cycles.
= 0
= 0
= 0
Test Setup
Max (Note 2)
8
and
Test Conditions
1560
1800
128
800
800
720
720
113
170
–100 mA
15
57
49
98
–1.0 V
–1.0 V
Fine-pitch BGA
Fine-pitch BGA
Fine-pitch BGA
Min
9
150°C
125°C
for further information on command
TSOP
TSOP
TSOP
Unit
sec
sec
sec
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Typ
4.2
8.5
5.4
7.5
3.9
6
Excludes system level
programming prior to
December 14, 2005
overhead (Note 7)
erasure (Note 6)
V
Excludes 00h
+100 mA
CC
Comments
12.5 V
Min
Max
10
20
+ 1.0 V
Max
7.5
5.0
6.5
4.7
12
9
Years
Years
Unit
Unit
pF
pF
pF
pF
pF
pF