AM29PL160C AMD [Advanced Micro Devices], AM29PL160C Datasheet
AM29PL160C
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AM29PL160C Summary of contents
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... Data Sheet This product has been retired and is not recommended for designs. For new designs, S29GL016A supersedes Am29PL160C. Please refer to the S29GL-A family data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. The following document contains information on Spansion memory products. ...
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... CMOS 3.0 Volt-only High Performance Page Mode Flash Memory This product has been retired and is not recommended for designs. For new designs, S29GL016A supersedes Am29PL160C. Please refer to the S29GL-A family data sheet for specifica- tions and ordering information. Availability of this document is retained for reference and historical purposes only. ...
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... GENERAL DESCRIPTION The Am29PL160C Mbit, 3.0 Volt-only Page mode Flash memory device organized as 2,097,152 bytes or 1,048,576 words.The device is offered in a 44- pin 48-pin TSOP package. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device can be pro EPROM programmers ...
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... Writing Commands/Command Sequences ............................ 10 Program and Erase Operation Status .................................... 10 Standby Mode ........................................................................ 10 Automatic Sleep Mode ........................................................... 10 Output Disable Mode .............................................................. 10 Table 4. Sector Address Table, Bottom Boot (Am29PL160CB) ......11 Autoselect Mode ..................................................................... 12 Table 5. Am29PL160C Autoselect Codes (High Voltage Method) ..12 Sector Protection/Unprotection ............................................... 12 Common Flash Memory Interface (CFI Table 6. CFI Query Identification String ..........................................13 Table 7 ...
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... A0–A19 A =3.0–3 2.7–3 Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29PL160C Am29PL160C -65R -70R - – DQ0 DQ15 Input/Output Buffers Data ...
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... DQ3 DQ11 May 9, 2006 22143C7 48-pin Standard TSOP 44-Pin 11 Standard Am29PL160C DQ15/A-1 45 DQ7 44 DQ14 43 DQ6 42 DQ13 41 DQ5 40 DQ12 39 DQ4 ...
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... Write Enable input V = 3.0 volt-only single power supply CC (see Product Selector Guide for speed options and voltage supply tolerances Device ground Pin not connected internally LOGIC SYMBOL 20 A0–A19 CE# OE# WE# BYTE# Am29PL160C DQ0–DQ15 (A-1) 22143C7 May 9, 2006 ...
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... Am29PL160C B -65R S DEVICE NUMBER/DESCRIPTION Am29PL160C 16 Megabit ( 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory Valid Combinations (Bottom Boot) AM29PL160CB-65R EI, SI, AM29PL160CB-70R EF, SF AM29PL160CB-90 May 9, 2006 22143C7 TEMPERATURE RANGE ° Industrial (– +85 ° Industrial (–40 ...
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... The command register it- self does not occupy any addressable memor y location. The register is composed of latches that store the commands, along with the address and data infor- mation needed to execute the command. The contents Table 1. Am29PL160C Device Bus Operations Operation CE# Read L ...
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... Page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. The Page size of the Am29PL160C device is 8 words bytes, with the appropriate Page being selected by the higher address bits A3–A19 and the LSB bits A0–A2 (in the word mode) and A (in the byte mode) determining the specific word/byte within that page ...
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... OE# must be at VIH before the device reduces current to the stated sleep mode specification. Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- ance state. Am29PL160C ± 0.3 V. (Note that this CE# is held IH ± 0.3 V, the device will be in ...
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... Table 4. Sector Address Table, Bottom Boot (Am29PL160CB) Sector A19 A18 A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 ...
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... When using programming equipment, the autoselect mode requires V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Table 5. Am29PL160C Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: ...
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... Query Unique ASCII string “QRY” 0059h 0002h Primary OEM Command Set 0000h 0040h Address for Primary Extended Table 0000h 0000h Alternate OEM Command Set (00h = none exists) 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) 0000h Am29PL160C Description 13 ...
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... Erase Block Region 2 Information 0020h 0000h 0000h 0000h Erase Block Region 3 Information 0080h 0003h 0006h 0000h Erase Block Region 4 Information 0000h 0004h Am29PL160C Description pin present) PP pin present µs N µs (00h = not supported (00h = not supported) N ...
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... CE# and WE# must be a logical zero while OE logical one. Power-Up Write Inhibit CC If WE the device does not accept commands on the rising edge of WE#. The internal state machine is automati- cally reset to reading array data on power-up. Am29PL160C Description is greater than V CC LKO or WE initiate a write cycle, IH ...
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... The system can determine the status of the program operation by using DQ7 or DQ6. See “Write Operation Status” for informa- tion on these status bits. Any commands written to the device during the Em- bedded Program Algorithm are ignored. Am29PL160C 22143C7 May 9, 2006 ...
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... Erase algorithm are ignored. The system can determine the status of the erase op- eration by using DQ7, DQ6, or DQ2. See “Write Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the Am29PL160C START Write Program Command Sequence Data Poll ...
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... Erase Suspend mode, and is ready for another valid operation. See “Autoselect Command Sequence” for more information. The system must write the Erase Resume command (address bits are “don’t care”) to exit the erase sus- Am29PL160C 22143C7 May 9, 2006 ...
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... START Write Erase Command Sequence Data Poll from System No Data = FFh? Erasure Completed Notes: 1. See Table 10 for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 2. Erase Operation Am29PL160C Embedded Erase algorithm in progress Yes 19 ...
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... Command Definitions Table 10. Am29PL160C Command Definitions Command Sequence (Note 1) Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Bottom Boot Block Byte Word Sector Protect Verify 4 (Note 9) Byte Word CFI Query (Note 10) 1 Byte Word Program 4 Byte ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5 Figure 3. Data# Polling Algorithm Am29PL160C Yes No Yes Yes No ...
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... Figure 4). DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1.” This is a failure Am29PL160C 22143C7 May 9, 2006 ...
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... To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent Program/Erase sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 11 shows the outputs for DQ3. Am29PL160C 23 ...
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... DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details Table 11. Write Operation Status DQ7 (Note 2) DQ6 DQ7# Toggle 0 Toggle 1 No toggle Data Data DQ7# Toggle Am29PL160C DQ5 DQ2 (Note 1) DQ3 (Note 2) 0 N/A No toggle 0 1 Toggle 0 N/A Toggle Data Data Data ...
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... Operating ranges define those limits between which the func- tionality of the device is guaranteed. May 9, 2006 22143C7 +0.8 V –0.5 V –2.0 V Figure 5. Maximum Negative Overshoot Waveform 2.0 V for +2 +0.5 V 2.0 V Figure 6. Maximum Positive Overshoot Waveform Am29PL160C ...
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... 4.0 mA min I = –2 min I = –100 µ min . Typical max Am29PL160C Min Typ Max Unit ±1.0 µA 35 µA ±1.0 µ µ µ –0.5 0 ...
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... Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 Note °C May 9, 2006 22143C7 1500 2000 2500 Time Frequency in MHz Figure 8. Typical I vs. Frequency CC1 Am29PL160C 3000 3500 4000 3 ...
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... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Measurement Level Am29PL160C -70R, -65R -90 Unit 1 TTL gate L 30 100 0.0– ...
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... See Figure 9 and Table 12 for test specifications. May 9, 2006 22143C7 Test Setup Min CE#= Max OE#=V IL OE#=V Max IL Max Max Max Max Read Toggle and Data# Polling Min Am29PL160C Speed Options -65R -70R -90 Unit ...
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... Note: Word Configuration: Toggle A0, A1, A2. Byte Configuration: Toggle A-1, A0, A1, A2 Addresses Stable t ACC OEH t CE HIGH Z Same Page PACC PACC t ACC Qa Qb Figure 12. Page Read Timings Am29PL160C HIGH Z Output Valid Ad t PACC Qc Qd 22143C7 May 9, 2006 ...
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... Data Output (DQ0–DQ7) (DQ0–DQ14) Address DQ15 Input Output t FHQV The falling edge of the last WE# signal t SET ( HOLD AH and t specifications Am29PL160C Speed Options -65R -70R -90 Unit Data Output (DQ0–DQ7) Address Input 31 ...
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... See the “Erase and Programming Performance” section for more information Min Min Min Min Min Min Min Min Min Min Min Byte Typ Word Typ Typ Min Am29PL160C Speed Options Unit -65R -70R - ...
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... Illustration shows device in word mode. May 9, 2006 22143C7 WPH A0h is the true data at the program address. OUT Figure 15. Program Operation Timings Am29PL160C Read Status Data (last two cycles WHWH1 D Status OUT 33 ...
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... AS SA 555h for chip erase WPH t DH 55h 30h 10 for Chip Erase Complement Complement Status Data Status Data Am29PL160C Read Status Data WHWH2 In Complete Progress VA High Z True Valid Data High Z True Valid Data 22143C7 May 9, 2006 ...
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... Valid Status Valid Status (first read) (second read) Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 19. DQ2 vs. DQ6 for Erase and Erase Suspend Operations Am29PL160C VA VA Valid Status Valid Data (stops toggling) Erase Resume Erase Erase Complete Read 35 ...
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... See the “Erase and Programming Performance” section for more information -65R Min 65 Min Min 45 Min 35 Min Min Min Min Min Min 35 Min Byte Typ Word Typ Typ Am29PL160C Speed Options -70R -90 Unit ...
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... for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29PL160C PA DQ7# D OUT = data written to the OUT 37 ...
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... V, one pin at a time. CC Test Setup OUT Test Conditions 150°C 125°C Am29PL160C Unit Comments s Excludes 00h programming prior to erasure (Note 4) s µs µs Excludes system level overhead (Note 1,000,000 cycles. Additionally, CC Min Max 12 ...
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... PHYSICAL DIMENSIONS TS 048—48-Pin Standard Thin Small Outline Package May 9, 2006 22143C7 Am29PL160C Dwg rev AA; 10/99 39 ...
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... PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package, Standard Pinout Am29PL160C Dwg rev AC; 10/99 22143C7 May 9, 2006 ...
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... Global Deleted references to hardware reset (RESET#) input. Added reverse pinout SO package. Deleted 90R speed option. TSOP and SO Pin Capacitance Added TSOP pin capacitance. Revision C+5 (June 10, 2004) Ordering Information Added Pb-free package OPNs Revision C+6 (February 16, 2006) Global Deleted 120 ns speed option. Am29PL160C 41 ...
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... AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies Am29PL160C 22143C7 May 9, 2006 ...