AM29PL160C AMD [Advanced Micro Devices], AM29PL160C Datasheet - Page 40

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AM29PL160C

Manufacturer Part Number
AM29PL160C
Description
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet

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ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
* For reference only. BSC is an ANSI standard for Basic Space Centering.
38
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
(Note 3)
Input voltage with respect to V
(including A9 and OE#)
Input voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 10 for further information on command definitions.
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
CC
Control Pin Capacitance
Parameter Description
Output Capacitance
. Test conditions: V
Input Capacitance
Description
Word Mode
Byte Mode
SS
SS
on all pins except I/O pins
on all I/O pins
CC
Typ (Note 1)
= 2.7 V, 1,000,000 cycles.
CC
D A T A
40
14
5
7
9
9
= 3.0 V, one pin at a time.
Am29PL160C
Max (Note 2)
S H E E T
300
360
V
60
42
27
Test Conditions
IN
= 0
Test Setup
°
V
V
C, 3.0 V V
150°C
125°C
OUT
IN
= 0
= 0
–100 mA
–1.0 V
–1.0 V
Min
CC
Unit
µs
µs
s
s
s
s
, 1,000,000 cycles. Additionally,
TSOP
SO
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Min
10
20
Typ
8.5
7.5
6
8
Comments
22143C7 May 9, 2006
V
CC
+100 mA
12.5 V
Max
Max
+ 1.0 V
7.5
12
10
9
Years
Years
Unit
Unit
pF
pF
pF
pF

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