HUFA76413DK8T_10 FAIRCHILD [Fairchild Semiconductor], HUFA76413DK8T_10 Datasheet - Page 4
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HUFA76413DK8T_10
Manufacturer Part Number
HUFA76413DK8T_10
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.HUFA76413DK8T_10.pdf
(11 pages)
HUFA76413DK8T_F085 Rev. C1
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Figure 5. Forward Bias Safe Operating Area
25
20
15
10
200
100
5
0
10
0.2
1
100
90
80
70
60
50
40
1.5
1
2
Figure 7. Transfer Characteristics
OPERATION IN THIS
LIMITED BY r
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
I
T
T
SINGLE PULSE
DD
D
A
J
= 1A
AREA MAY BE
T
= MAX RATED
= 25
= 15V
J
Voltage and Drain Current
= 25
I
D
2.0
o
V
V
= 5.1A
C
V
DS
GS
o
GS
C
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
4
, GATE TO SOURCE VOLTAGE (V)
T
J
2.5
= 150
o
10
C
6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
3.0
T
T
A
J
= -55
= 25°C unless otherwise noted
o
8
10ms
C
1ms
100 s
3.5
100
4.0
10
4
15
10
25
20
15
10
5
0
1
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
2.0
1.5
1.0
0.5
0.1
0
-80
Resistance vs Junction Temperature
Figure 8. Saturation Characteristics
If R = 0
t
If R
t
AV
AV
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
STARTING T
0
-40
V
AS
DS
0.5
T
)/(1.3*RATED BV
V
t
, DRAIN TO SOURCE VOLTAGE (V)
J
GS
AV
, JUNCTION TEMPERATURE (
AS
, TIME IN AVALANCHE (ms)
= 10V
*R)/(1.3*RATED BV
J
Capability
= 150
0
1
o
C
1.0
DSS
40
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
- V
DD
STARTING T
V
DSS
GS
)
V
80
- V
= 5V
GS
www.fairchildsemi.com
DD
= 10V, I
1.5
10
o
) +1]
C)
T
V
V
J
A
120
GS
GS
= 25
= 25
D
=5.1A
= 3.5V
= 3V
o
o
C
C
160
2.0
40