HUF75332G3_05 FAIRCHILD [Fairchild Semiconductor], HUF75332G3_05 Datasheet

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HUF75332G3_05

Manufacturer Part Number
HUF75332G3_05
Description
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.HUF75332G3_05.pdf (10 pages)
60A, 55V, 0.019 Ohm, N-Channel UltraFET
Power MOSFETs
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75332.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75332S3ST.
Packaging
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2005 Fairchild Semiconductor Corporation
HUF75332G3
HUF75332P3
HUF75332S3S
PART NUMBER
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
DRAIN
(TAB)
TO-247
TO-220AB
TO-263AB
JEDEC STYLE TO-247
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
PACKAGE
Data Sheet
For severe environments, see our Automotive HUFA series.
75332G
75332P
75332S
SOURCE
SOURCE
DRAIN
BRAND
GATE
HUF75332G3, HUF75332P3, HUF75332S3S
GATE
JEDEC TO-263AB
Features
• 60A, 55V
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- Temperature Compensated PSPICE® and SABER™
- SPICE and SABER Thermal Impedance Models
- TB334, “Guidelines for Soldering Surface Mount
(FLANGE)
Models
Available on the WEB at: www.fairchildsemi.com
Components to PC Boards”
DRAIN
(FLANGE)
DRAIN
January 2005
JEDEC TO-220AB
G
HUF75332G3, HUF75332P3, HUF75332S3S Rev. B1
D
S
SOURCE
DRAIN
GATE

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HUF75332G3_05 Summary of contents

Page 1

Data Sheet 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is ...

Page 2

Absolute Maximum Ratings T Drain to Source Voltage (Note Drain to Gate Voltage (R = ...

Page 3

Electrical Specifications PARAMETER CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge Typical Performance Curves 1.2 1.0 0.8 0.6 ...

Page 4

Typical Performance Curves 1000 V = 10V GS 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 500 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON 55V DSS(MAX ...

Page 5

Typical Performance Curves 2.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 10V 60A GS D 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J FIGURE 9. NORMALIZED ...

Page 6

Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT G(REF) FIGURE 16. GATE CHARGE TEST CIRCUIT V GS ...

Page 7

PSPICE Electrical Model .SUBCKT HUF75332 rev 17 February 1999 1.8e 1.73e-9 CIN 6 8 1.19e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 ...

Page 8

SABER Electrical Model REV 17 February 1999 template huf75332 n2, n1, n3 electrical n2, n1 var i iscl d..model dbodymod = (is = 1.3e-12, xti = 6, cjo = 1.7e- 4.0e- 0.45 ...

Page 9

SPICE Thermal Model REV 11February 1999 HUF75332 CTHERM1 th 6 4.00e-3 CTHERM2 6 5 7.00e-3 CTHERM3 5 4 7.50e-3 CTHERM4 4 3 8.00e-3 CTHERM5 3 2 1.85e-2 CTHERM6 2 tl 12.55 RTHERM1 th 6 7.09e-3 RTHERM2 6 5 1.77e-2 RTHERM3 ...

Page 10

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ ...

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