AM41PDS3224DB100IS AMD [Advanced Micro Devices], AM41PDS3224DB100IS Datasheet - Page 50

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AM41PDS3224DB100IS

Manufacturer Part Number
AM41PDS3224DB100IS
Description
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
FLASH AC CHARACTERISTICS
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
May 13, 2002
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings
Addresses
RESET#
RY/BY#
CE#f
WE#
Data
OE#
t
RH
555 for program
2AA for erase
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
P R E L I M I N A R Y
t
t
t
DS
CP
PA for program
SADD for sector erase
555 for chip erase
CPH
t
AS
t
DH
Am41PDS3224D
t
AH
OUT
PD for program
30 for sector erase
10 for chip erase
is the data written to the device.
t
BUSY
t
WHWH1 or 2
Data# Polling
DQ7#
PA
D
OUT
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