TPCP8401_07 TOSHIBA [Toshiba Semiconductor], TPCP8401_07 Datasheet
TPCP8401_07
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TPCP8401_07 Summary of contents
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TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ) ○ Switching Regulator Applications ○ Load Switch Applications • Lead(Pb)-Free • Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel ...
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N-ch Characteristics Drain-source voltage Gate-source voltage DC (Note 1) Drain current Pulse (Note 1) Channel temperature Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature This transistor is an electrostatic-sensitive device. Handle with caution. Common ...
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Electrical Characteristics P-ch Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total ...
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N-ch Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Turn-on time Switching time Turn-off time Input capacitance Reverse transfer capacitance Output capacitance Precaution V can be expressed as the ...
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Pch I – −5 −1.8 −5 −1.9 −2.5 −2 −4 −3 −4, −4.5 −3 −2 −1 Common source Ta = 25°C Pulse test 0 −0.4 −0.8 −1.2 0 Drain-source voltage V I – −10 ...
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R – (ON) 160 Common source Pulse test 120 −2 −1 −1.4A −2.5 V −2 −1. −1.4 A, −2.8 A, −5.5 ...
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Device mounted on a glass- epoxy board (b) (Note 2b) 100 0.3 0.1 0.001 0.01 Safe operating area −100 − max (pulsed)* 1 ms* −10 10 ms* −3 −1 −0.3 −0.1 −0.03 ...
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Nch I – 250 2 2.3 200 10 2.1 150 100 0.5 1 Drain-source voltage V R – (ON 1 ...
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500 Common source 300 25°C 100 100 Drain current I (mA) D Capacitance – 100 50 10 ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...