TPCP8401_07 TOSHIBA [Toshiba Semiconductor], TPCP8401_07 Datasheet

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TPCP8401_07

Manufacturer Part Number
TPCP8401_07
Description
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ? / ?-MOS ?)
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
○ Switching Regulator Applications
○ Load Switch Applications
Absolute Maximum Ratings
P-ch
Lead(Pb)-Free
Multi-chip discrete device; built-in P channel MOS FET for main
switch and N Channel MOS FET for drive
Small footprint due to small and thin package
Low drain-source ON resistance
: P Channel R
Low drain-source ON resistance
High forward transfer admittance
: P Channel |Y
Low leakage current
: P Channel I
Enhancement−mode
: P Channel V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ)
Characteristics
DSS
DS (ON)
th
fs
= −0.5 to −1.2 V (V
| = 13 S (typ.)
(Note 2a) (Note 4)
= −10 μA (V
GS
DC
Pulse (Note 1)
= 20 kΩ)
= 31 mΩ (typ.)
(Note 2a)
(Note 2b)
(Note 1)
(Note 3)
(t = 5 s)
(t = 5 s)
DS
= −12 V)
DS
(Ta = 25°C)
Symbol
V
V
V
TPCP8401
E
E
= −10 V, I
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
AS
AR
D
ch
D
D
D
= −200 μA)
Rating
−22.0
−5.5
1.96
−2.8
0.22
−12
−12
150
1.0
5.3
±8
1
Unit
mJ
mJ
°C
W
W
V
V
V
A
A
Weight: 0.017 g (typ.)
Circuit Configuration
Marking
JEDEC
JEITA
TOSHIBA
1.Source(Nch)
2.Drain(Pch)
3.Drain(Pch)
4.Drain(Pch)
0.475
8
S
1
1
8
0.33±0.05
8
1
0.025
8401
0.65
7
(Note5)
2.9±0.1
2
2
0.17±0.02
5.Gate(Pch)
6.Source(Pch)
7.Gate(Nch)
8.Drain(Nch)
7
0.05
S
M
2-3V1G
TPCP8401
6
5
4
Lot No.
3
A
2006-11-13
6
3
B
0.28
1.12
1.12
0.28
A
0.8±0.05
5
Unit: mm
+0.13
+0.13
+0.1
+0.1
-0.11
-0.12
-0.12
-0.11
0.05
4
5
4
M
B

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TPCP8401_07 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ) ○ Switching Regulator Applications ○ Load Switch Applications • Lead(Pb)-Free • Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel ...

Page 2

N-ch Characteristics Drain-source voltage Gate-source voltage DC (Note 1) Drain current Pulse (Note 1) Channel temperature Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature This transistor is an electrostatic-sensitive device. Handle with caution. Common ...

Page 3

Electrical Characteristics P-ch Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total ...

Page 4

N-ch Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Turn-on time Switching time Turn-off time Input capacitance Reverse transfer capacitance Output capacitance Precaution V can be expressed as the ...

Page 5

Pch I – −5 −1.8 −5 −1.9 −2.5 −2 −4 −3 −4, −4.5 −3 −2 −1 Common source Ta = 25°C Pulse test 0 −0.4 −0.8 −1.2 0 Drain-source voltage V I – −10 ...

Page 6

R – (ON) 160 Common source Pulse test 120 −2 −1 −1.4A −2.5 V −2 −1. −1.4 A, −2.8 A, −5.5 ...

Page 7

Device mounted on a glass- epoxy board (b) (Note 2b) 100 0.3 0.1 0.001 0.01 Safe operating area −100 − max (pulsed)* 1 ms* −10 10 ms* −3 −1 −0.3 −0.1 −0.03 ...

Page 8

Nch I – 250 2 2.3 200 10 2.1 150 100 0.5 1 Drain-source voltage V R – (ON 1 ...

Page 9

500 Common source 300 25°C 100 100 Drain current I (mA) D Capacitance – 100 50 10 ...

Page 10

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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