TPCP8401_07 TOSHIBA [Toshiba Semiconductor], TPCP8401_07 Datasheet - Page 6

• Manufacturer Part Number: TPCP8401_07
• Description: TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ? / ?-MOS ?)
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

10000
3000
1000
160
120
300
100
80
40
30
10
−0.1
2.5
1.5
0.5
−80
−80
0
2
1
0
0
Common source
Pulse test
−2.5 V
−4.5 V
Common source
Ta = 25°C
f = 1 MHz
V GS = 0 V
V GS = −1.8 V
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
−0.3
−40
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
Capacitance – V
−1
0
0
I D = −1.4A
R
DS (ON)
P
I D = −1.4A
D
−3
40
40
– Ta
80
−2.8 A
I D = −1.4 A, −2.8 A, −5.5 A
(1) Device mounted on a
(2) Device mounted on a
– Ta
glass-epoxy board(a)
(Note 2a)
glass-epoxy board(b)
(Note 2b)
−10
80
80
DS
DS
C oss
C rss
C iss
−2.8 A
120
°
°
(V)
−30
C)
C)
120
120
−5.5 A
−100
160
160
160
6
−100
−2.0
−1.5
−1.0
−0.5
−30
−10
−20
−16
−12
−3
−1
−8
−4
−80
0
0
0
0
Common source
I D = −5.5 A
Ta = 25°C
Pulse test
−5
−2.0
V DD = −10 V
Dynamic input/output characteristics
−40
Drain-source voltage V
−1.8
Ambient temperature Ta (
0.4
Total gate charge Q
8
−1
−4.5
−2.5 V
0
0.8
16
I
−2.5 V
DR
V
th
V GS = 0 V
– V
40
– Ta
−5 V
DS
1.2
24
V DD = −10 V
80
g
DS
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −200 μA
Pulse test
(nC)
1.6
32
°
(V)
C)
120
TPCP8401
V GS
2006-11-13
160
2.0
40
−10
−8
−6
−4
−2
0