TPCP8401_07 TOSHIBA [Toshiba Semiconductor], TPCP8401_07 Datasheet - Page 3

• Manufacturer Part Number: TPCP8401_07
• Description: TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ? / ?-MOS ?)
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
P-ch
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current (pulse) (Note 1)
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
GS
= −5.5 A
3
= −5.5 A, V
(Ta = 25°C)
= ±8 V, V
= −12 V, V
= −10 V, I
= −1.8 V, I
= −2.5 V, I
= −4.5 V, I
= −10 V, I
= −10 V, V
 − 5 V
∼ − −10 V, V
0 V
Test Condition
Test Condition
w
DS
= 10 μs
D
D
GS
GS
D
D
D
GS
GS
GS
GS
= −200 μA
= −2.8 A
⎯
= −1.4 A
= −2.8 A
= −2.8 A
= 0 V
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −5 V,
I
V
D
DD
= −2.8 A
∼ − −6 V
V
OUT
−0.5
Min
−12
Min
6.5
⎯
⎯
−4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1520
Typ.
Typ.
330
380
9.5
15
66
44
31
13
16
28
74
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
TPCP8401
2006-11-13
−1.2
Max
Max
±10
−10
103
−22
1.2
58
38
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
V
S