GS78108AB GSI [GSI Technology], GS78108AB Datasheet - Page 5

• Manufacturer Part Number: GS78108AB
• Description: 1M x 8 8Mb Asynchronous SRAM
• Manufacturer: GSI [GSI Technology]

AC Test Conditions
AC Characteristics
Read Cycle
Rev: 1.04 5/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted
Output load 2 for t
Output disable to output in High Z (OE)
Output reference level
Output enable to output in low Z (OE)
Chip disable to output in High Z (CE)
Input reference level
Chip enable to output in low Z (CE)
Output enable to output valid (OE)
Output hold from address change
Input high level
Input low level
Input rise time
Chip enable access time (CE)
Parameter
Input fall time
Output load
Address access time
Read cycle time
Parameter
LZ
, t
HZ
, t
OLZ
and t
OHZ
.
Conditions
V
V
tr = 1 V/ns
tf = 1 V/ns
Fig. 1& 2
IH
IL
1.4 V
1.4 V
= 0.4 V
= 2.4 V
Symbol
5/11
t
t
t
OHZ
t
t
OLZ
t
t
t
t
HZ
RC
OE
OH
LZ
AA
AC
*
*
*
*
Min
—
—
—
—
—
8
3
3
0
-8
Max
3.5
3.5
—
—
—
—
8
8
4
DQ
Min
10
—
—
—
—
—
3
3
0
-10
DQ
Max
Output Load 1
Output Load 2
10
10
—
—
—
—
4
5
4
5pF
VT = 1.4 V
Min
12
1
—
—
—
—
—
3
3
0
3.3 V
© 2003, GSI Technology
50Ω
-12
589Ω
434Ω
GS78108AB
Max
—
12
12
—
—
—
5
6
5
30pF
1
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns