GS78108AB GSI [GSI Technology], GS78108AB Datasheet - Page 6

• Manufacturer Part Number: GS78108AB
• Description: 1M x 8 8Mb Asynchronous SRAM
• Manufacturer: GSI [GSI Technology]

* These parameters are sampled and are not 100% tested
Write Cycle
Rev: 1.04 5/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output Low Z from end of write
Address valid to end of write
Chip enable to end of write
Write recovery time (WE)
Write recovery time (CE)
Write to output in High Z
Address set up time
Write pulse width
Data set up time
Write cycle time
Data hold time
Parameter
Address
Data Out
Previous Data
Symbol
Read Cycle 1:CE = OE = V
tWHZ
tWLZ
tWR1
tWC
tCW
tDW
tWR
tAW
tWP
tDH
tAS
t
OH
*
*
6/11
Min
5.5
5.5
5.5
—
8
4
0
0
0
0
3
t
AA
-8
t
RC
Max
3.5
—
—
—
—
—
—
—
—
—
—
IL
Min
10
—
7
7
5
0
7
0
0
0
3
-10
Data valid
Max
—
—
—
—
—
—
—
—
—
—
4
Min
12
—
8
8
6
0
8
0
0
0
3
-12
© 2003, GSI Technology
Max
—
—
—
—
—
—
—
—
—
—
GS78108AB
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns