H57V2582GTR-60J HYNIX [Hynix Semiconductor], H57V2582GTR-60J Datasheet - Page 13

• Manufacturer Part Number: H57V2582GTR-60J
• Description: 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
• Manufacturer: HYNIX [Hynix Semiconductor]

BASIC FUNCTIONAL DESCRIPTION
Mode Register
OP Code
Rev 1.0 / Aug. 2009
CAS Latency
BA1
A6
A9
0
0
0
0
0
1
1
1
1
0
1
BA0
A5
0
0
0
1
1
0
0
1
1
Burst Read and Single Write
Burst Read and Burst Write
A12
A4
0
1
0
1
0
1
0
1
0
Write Mode
A11
0
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
A10
0
2
3
OP Code
A9
A8
0
A7
0
Burst Length
A2
0
0
0
0
1
1
1
1
Synchronous DRAM Memory 256Mbit
A6
CAS Latency
A1
0
0
1
1
0
0
1
1
Burst Type
A5
A0
0
1
0
1
0
1
0
1
A3
0
1
A4
H57V2582GTR-xxI Series
Reserved
Reserved
Reserved
Full page
A3 = 0
Burst Type
BT
Sequential
A3
Interleave
1
2
4
8
Burst Length
A2
Burst Length
Reserved
Reserved
Reserved
Reserved
A1
A3=1
1
2
4
8
A0
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