H57V2582GTR-60J HYNIX [Hynix Semiconductor], H57V2582GTR-60J Datasheet - Page 4

• Manufacturer Part Number: H57V2582GTR-60J
• Description: 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
• Manufacturer: HYNIX [Hynix Semiconductor]

256Mb Synchronous DRAM(32M x 8) FEATURES
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ORDERING INFORMATION
Note:
1. H57V2582GTR-XXI Series: Normal power & Commercial temp.
2. H57V2582GTR-XXJ Series: Low Power & Commercial temp.
Rev 1.0 / Aug. 2009
H57V2582GTR-60I
H57V2582GTR-75I
H57V2582GTR-60J
H57V2582GTR-75J
This product is in compliance with the directive pertaining of RoHS.
Standard SDRAM Protocol
Internal 4bank operation
Power Supply Voltage : V
All device pins are compatible with LVTTL interface
Low Voltage interface to reduce I/O power
8,192 Refresh cycles / 64ms
Programmable CAS latency of 2 or 3
Programmable Burst Length and Burst Type
-40
Package Type : 54_Pin TSOPII
Part Number
- 1, 2, 4 or 8 for Interleave Burst
- 1, 2, 4, 8 or full page for Sequential Burst
o
C ~ 85
o
C Operation
Frequency
166MHz
133MHz
166MHz
133MHz
Clock
DD
= 3.3V, V
Latency
DDQ
CAS
3
3
3
3
= 3.3V
Power
Normal
Power
Low
Voltage
3.3V
Synchronous DRAM Memory 256Mbit
4Banks x 8Mbits
Organization
x8
H57V2582GTR-xxI Series
Interface
LVTTL
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