TLP701_07 TOSHIBA [Toshiba Semiconductor], TLP701_07 Datasheet - Page 2

• Manufacturer Part Number: TLP701_07
• Description: IGBT/Power MOS FET gate drive
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Absolute Maximum Ratings
Recommended Operating Conditions
Operating frequency
Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H. ≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Note 1: Pulse width P
Note 2: Exponential waveform pulse width P
Note 3: Exponential waveform I
Note 4: For the effective lead soldering area
Note 5: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively.
Note 6: A ceramic capacitor (0.1 μF) should be connected from pin 6 to pin 4 to stabilize the operation of the high
Input current, ON
Input voltage, OFF
Supply voltage
Peak output current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Note 7: Input signal rise time (fall time) < 0.5 μs.
Forward current
Forward current derating (Ta ≥ 85°C)
Peak transient forward current
Reverse voltage
Junction temperature
“H” peak output current
“L” peak output current
Output voltage
Supply voltage
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
gain linear amplifier. Failure to provide the bypassing may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Characteristics
Characteristics
W
≤ 1 μs, 300 pps
(Note 7)
OPH
(Ta = 25 °C)
I
≤−0.3 A (≤ 2 μs), I
OPH
V
Symbol
I
F (OFF)
F (ON)
T opr
V
CC
/ I
OPL
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
W
≤ 2 μs, f ≤15 kHz
−40
Min
7.5
10
⎯
0
OPL
2
ΔI
Symbol
I
I
T opr
T stg
V
T sol
BV
F
OPH
I
OPL
V
V
Typ.
FP
T j
T j
I
/ΔTa
CC
F
f
≤+0.3 A (≤ 2 μs),Ta =100 °C
O
⎯
⎯
⎯
⎯
⎯
R
S
± 0.2
Max
100
0.8
10
30
−40 to 100
−55 to 125
Rating
−0.54
5000
−0.6
125
125
260
0.6
20
35
35
25
1
5
Unit
mA
°C
V
V
A
mA/°C
Vr m s
Unit
kHz
mA
°C
°C
°C
°C
°C
A
V
A
A
V
V
2007-10-01
TLP701