TLP701_07 TOSHIBA [Toshiba Semiconductor], TLP701_07 Datasheet - Page 3

• Manufacturer Part Number: TLP701_07
• Description: IGBT/Power MOS FET gate drive
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Isolation Characteristics
Forward voltage
Temperature coefficient of forward
voltage
Input reverse current
Input capacitance
Output current
Output voltage
Supply current
Threshold input current
Threshold input voltage
Supply voltage
( * ): All typical values are at Ta = 25°C
Note 8: Duration of Io time ≤ 50 μs, 1 pulse
Note 9: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low
Capacitance input to output
Isolation resistance
Isolation voltage
power consumption design.
It is therefore all the more necessary to observe general precautions regarding ESD when handling this
component.
Characteristics
Characteristic
(Note 8)
“H” Level
“H” Level
“H” Level
“L” Level
“L” Level
“L” Level
L → H
H → L
(Ta = 25 °C)
(Ta = −40 to 100 °C, unless otherwise specified)
∆V
Symbol
I
I
I
I
V
OPH1
OPH2
I
OPL1
OPL2
V
I
V
I
V
CCH
CCL
F
C
FLH
V
FHL
I
OH
CC
OL
R
/∆Ta
F
T
Symbol
BV
C
R
S
S
Circuit
S
Test
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
2
3
4
5
6
V = 0 V , f = 1MHz
R.H. ≤ 60 %, V
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
I
I
V
V =0 V, f = 1 MHz, Ta = 25 °C
V
I
V
I
V
V
V
V
V
F
F
F
F
R
CC
CC
CC
CC
O
CC
CC
3
= 5 mA, Ta = 25 °C
= 5 mA
= 5 mA
= 0 mA
=Open
= 5 V, Ta = 25 °C
= 10 to 30 V
= 15 V
= 15 V
= 10 V
= 15 V, V
= 15 V, V
Test Condition
Test Condition
S
O
O
= 500 V
⎯
> 1 V
< 1 V
V 6-5 = 4 V
V 6-5 = 10 V
V 5-4 = 2 V
V 5-4 = 10 V
I
I
I
V
I
I
O
F
O
F
F
F
= 5 mA
= 10 mA
= 0 mA
= −100 mA,
= 100 mA,
= 0.8 V
(Note 5)
(Note 5)
1×10
5000
Min.
−0.2
−0.4
Min
0.2
0.4
6.0
0.8
⎯
⎯
⎯
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
12
10000
10000
10
Typ.
1.0
Typ.*
−0.38
−0.60
⎯
1.55
−2.0
0.36
0.62
8.5
0.4
1.4
1.3
2.5
14
45
⎯
⎯
⎯
2007-10-01
Max.
⎯
⎯
⎯
⎯
⎯
Max
1.70
TLP701
1.0
2.0
2.0
10
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
V r m s
Unit
Vdc
mV/°C
pF
Ω
Unit
mA
mA
μA
pF
V
A
V
V
V