EN29F512 EON [Eon Silicon Solution Inc.], EN29F512 Datasheet - Page 14

• Manufacturer Part Number: EN29F512
• Description: 512 Kbit (64K x 8-bit) 5V Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

DATA PROTECTION
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with CE = V
Low V
During V
unintentional writes. If V
erase circuits are disabled. Under this condition, the device will reset to the READ mode.
Subsequent writes will be ignored until V
Write “Noise” Pulse Protection
Noise pulses less than 5ns on OE , CE or WE will neither initiate a write cycle nor change the
command register.
Logical Inhibit
If CE =V
“zero”. If CE ,
write.
Sector Protect and Unprotect
The hardware sector protection feature disables both program and erase operations in any sector.
The hardware sector unprotection feature re-enables both program and erase operation in
previously protected sectors.
Sector protection/unprotection must be implemented using programming equipment. The procedure
requires a high voltage (V
Inc. for an additional supplement on this feature.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
W E
.
CC
IH
CC
or
Write Inhibit
power-up or power-down
IL
WE
, W E = V
W E
=V
, and OE are all logical zero (not recommended usage), it will be considered a
IH
, writing is inhibited. To initiate a write cycle, CE and
IL
CC
and OE = V
ID
) on address pin A9 and the control pins. Contact Eon Silicon Solution,
< V
LOK
, the command register is disabled and all internal program or
,
IH
the EN29F512 locks out write cycles to protect against any
, the device will not accept commands on the rising edge of
CC
> V
LKO.
Rev. A, Issue Date: 2003/10/20
14
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
W E
EN29F512
must be a logical