EN29GL064 EON [Eon Silicon Solution Inc.], EN29GL064 Datasheet - Page 56

• Manufacturer Part Number: EN29GL064
• Description: 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

WE#
DQ6
DQ2
Figure 20. Alternate CE# Controlled Write Operation Timings
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
D
Shown above are the last two cycles of the program or erase command sequence and the last status read cycle
Reset# shown to illustrate t
sequence.
Figure 21. DQ2 vs. DQ6
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Addresses
Reset#
out
WE#
OE#
CE#
Data
RY/BY
= array data read at VA
t
GHEL
t
WS
t
Embedded
RH
Erase
Enter
0x555 for Program
0x2AA for Erase
t
DS
t
WC
0xA0 for
Program
0x55 for Erase
t
CP
RH
measurement references. It cannot occur as shown during a valid command
t
DH
Erase
t
PA for Program
SA for Sector Erase
0x555 for Chip Erase
CPH
t
t
AS
WH
Suspend
Rev. M, Issue Date: 2011/04/13
Erase
t
AH
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
Suspend
Enter
Read
56
t
BUSY
t
WHWH1
Enter Erase
©2004 Eon Silicon Solution, Inc.,
Suspend
Program
/ t
WHWH2
Status
Suspend
Program
Enter
VA
D
Erase
Suspend
Read
OUT
Resume
Erase
EN29GL064
www.eonssi.com
Erase
Complete
Erase