EN29LV400AB-45RBC EON [Eon Silicon Solution Inc.], EN29LV400AB-45RBC Datasheet
EN29LV400AB-45RBC
Related parts for EN29LV400AB-45RBC
EN29LV400AB-45RBC Summary of contents
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EN29LV400A 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3V, single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - ...
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CONNECTION DIAGRAMS A15 1 A14 2 A13 3 A12 4 A11 5 A10 WE# 11 RESET RY/BY A17 ...
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TABLE 1. PIN DESCRIPTION Pin Name Function A0-A17 Addresses DQ0-DQ14 15 Data Inputs/Outputs DQ15 (data input/output, word mode), DQ15 / A-1 A-1 (LSB address input, byte mode) CE# Chip Enable OE# Output Enable RESET# Hardware Reset Pin RY/BY# Ready/Busy Output ...
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TABLE 2A. TOP BOOT BLOCK SECTOR ARCHITECTURE ADDRESS RANGE Sector (X16) 10 3E000h-3FFFFh 7C000h-7FFFFh 9 3D000h-3DFFFh 7A000h-7BFFFh 8 3C000h-3CFFFh 78000h-79FFFh 7 38000h-3BFFFh 70000h – 77FFFh 6 30000h-37FFFh 60000h - 6FFFFh 5 28000h-2FFFFh 50000h – 5FFFFh 4 20000h-27FFFh 40000h – 4FFFFh ...
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TABLE 2B. BOTTOM BOOT BLOCK SECTOR ARCHITECTURE ADDRESS RANGE Sector (X16) 10 38000h-3FFFFh 70000h –7FFFFh 9 30000h-37FFFh 60000h – 6FFFFh 8 28000h-2FFFFh 50000h – 5FFFFh 7 20000h-27FFFh 40000h – 4FFFFh 6 18000h-1FFFFh 30000h – 3FFFFh 5 10000h-17FFFh 20000h – 2FFFFh ...
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PRODUCT SELECTOR GUIDE Product Number Regulated Voltage Range: Vcc=3.0-3.6 V Speed Option Full Voltage Range: Vcc=2.7 – 3.6 V Max Access Time acc Max CE# Access Max OE# Access ...
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TABLE 3. OPERATING MODES 4M FLASH USER MODE TABLE Operation CE# OE# Read L L Write L H ± 0.3V CMOS Standby TTL Standby H X Output Disable L H Hardware Reset X X Temporary Sector Unprotect ...
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USER MODE DEFINITIONS Word / Byte Configuration The signal set on the BYTE# Pin controls whether the device data I/O pins DQ15-DQ0 operate in the byte or word configuration. When the Byte# Pin is set at logic ‘1’, then the ...
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To access the autoselect codes in-system; the host system can issue the autoselect command via the command register, as shown in the Command Definitions table. This method does not require V . See “Command Definitions” for details on using the ...
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Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for t independent of the CE#, WE# and OE# control signals. Standard address access timings provide new data ...
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COMMAND DEFINITIONS The operations of the EN29LV400A are selected by one or more commands written into the command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are ...
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Erase Suspend mode, the system may once again read array data with the same exception. The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high, or while in the ...
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Unlock Bypass To speed up programming operation, the Unlock Bypass Command may be used. Once this feature is activated, the shorter two cycle Unlock Bypass Program command can be used instead of the normal four cycle Program Command to program ...
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When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. After the erase operation has been suspended, the system can read array data from or ...
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RY/BY#: Ready/Busy Status output The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or completed. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command ...
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The “Toggle Bit” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase- suspended. Toggle Bit II is valid after the ...
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Table 6. Status Register Bits DQ Name Logic Level DATA# 7 POLLING ‘-1-0-1-0-1-0-1-’ TOGGLE 6 BIT ‘-1-1-1-1-1-1-1-‘ 5 ERROR BIT ERASE 3 TIME BIT TOGGLE 2 ‘-1-0-1-0-1-0-1-’ BIT Notes: DQ7 DATA# Polling: indicates the P/E C status check during Program ...
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EMBEDDED ALGORITHMS Flowchart 1. Embedded Program Write Program Command Sequence (shown below) Data# Poll Device Verify Data? Increment No Address Programming Done Flowchart 2. Embedded Program Command Sequence See the Command Definitions section for more information on WORD mode. 555H ...
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Flowchart 3. Embedded Erase START Write Erase Command Sequence Data Poll from System or Toggle Bit successfully completed Data =FFh? No Yes Erase Done Flowchart 4. Embedded Erase Command Sequence See the Command Definitions section for more information on WORD ...
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Flowchart 5. DATA# Polling Algorithm Notes: (1) This second read is necessary in case the first read was done at the exact instant when the status data was in transition. Flowchart 6. Toggle Bit Algorithm Notes: (2) This second set ...
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Flowchart 7a. In-System Sector Protect Flowchart Temporary Sector Unprotect Mode Increment PLSCNT No PLSCNT = 25? Device failed Sector Protect Algorithm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. START PLSCNT ...
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Flowchart 7b. In-System Sector Unprotect Flowchart Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address (see Diagram 7a.) Increment PLSCNT No PLSCCNT = ...
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Table 7. DC Characteristics (T = 0°C to 70° 40°C to 85° 2.7-3.6V Symbol Parameter Input Leakage Current I LI Output Leakage Current I LO Supply Current (read) TTL (read) CMOS Byte I CC1 ...
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Test Conditions Device Under Test C L Note: Diodes are IN3064 or equivalent Test Specifications Test Conditions Output Load Output Load Capacitance Input Rise and Fall times Input Pulse Levels Input timing measurement reference levels Output timing measurement ...
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AC CHARACTERISTICS Hardware Reset (Reset#) Parameter Description Std Reset# Pin Low to Read or Write t READY Embedded Algorithms Reset# Pin Low to Read or Write t READY Non Embedded Algorithms t Reset# Pulse Width RP t Reset# High Time ...
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AC CHARACTERISTICS Word / Byte Configuration (Byte#) Std Parameter Description t Byte# to CE# switching setup time BCS t CE# to Byte# switching hold time CBH t RY/BY# to Byte# switching hold time RBH CE# OE# Byte# Byte# timings for ...
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Table 8. AC CHARACTERISTICS Read-only Operations Characteristics Parameter Symbols JEDEC Standard Description t t Read Cycle Time AVAV Address to Output Delay AVQV ACC t t Chip Enable To Output Delay ELQV Output Enable ...
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Table 9. AC CHARACTERISTICS Write (Erase/Program) Operations Parameter Symbols JEDEC Standard Description t t Write Cycle Time AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH DS ...
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Table 10. AC CHARACTERISTICS Write (Erase/Program) Operations Alternate CE# Controlled Writes Parameter Symbols JEDEC Standard Description t t Write Cycle Time AVAV Address Setup Time AVEL Address Hold Time ELAX Data ...
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Table 11. ERASE AND PROGRAMMING PERFORMANCE Parameter Typ Sector Erase Time 0.5 Chip Erase Time 5 Byte Programming Time 8 Word Programming Time 8 Byte 4.2 Chip Programming Time Word 2.1 Erase/Program Endurance 100K Table 12. LATCH UP CHARACTERISTICS Parameter ...
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AC CHARACTERISTICS Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings Erase Command Sequence (last 2 cycles Addresses 0x2AA SA CE# t GHWL OE WE WPH Data 0x55 t DS ...
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Figure 7. Program Operation Timings Program Command Sequence (last 2 cycles Addresses 0x555 PA CE# t GHWL OE WE# t WPH t CS Data OxA0 RY/BY# t VCS V CC ...
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Figure 8. AC Waveforms for DATA# Polling During Embedded Algorithm Operations t RC Addresses VA t ACC CE OE# t OEH WE# DQ[7] DQ[6:0] t BUSY RY/BY# Notes: 1. VA=Valid Address for reading Data# ...
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Figure 10. Alternate CE# Controlled Write Operation Timings PA for Program 0x555 for Program SA for Sector Erase 0x2AA for Erase 0x555 for Chip Erase Addresses WE GHEL OE CPH ...
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Figure 12. Sector Protect/Unprotect Timing Diagram V ID Vcc RESET VIDR SA, A6,A1,A0 Data 60h Sector Protect/Unprotect CE# WE# >1 µ S OE# Notes: Use standard microprocessor timings for this device for read and write cycles. For Sector ...
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FIGURE 14. TSOP 12mm x 20mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 36 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...
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This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 37 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...
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FIGURE 15. FBGA 6mm x 8mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 38 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...
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ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Plastic Packages Ambient Temperature With Power Applied Output Short Circuit Current A9, OE#, Reset# Voltage with All other pins Respect to Ground Notes more than one output shorted at a time. Duration ...
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ORDERING INFORMATION ─ EN29LV400A This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications PACKAGING CONTENT (Blank) = Conventional Free TEMPERATURE RANGE C = Commercial ...
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Revisions List Revision No Description A Initial Release This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 41 Rev. A, Issue Date: 2005/01/07 EN29LV400A Date 2004/01/07 ...