MPC8536EBVTATLA Freescale Semiconductor, MPC8536EBVTATLA Datasheet - Page 31

• Manufacturer Part Number: MPC8536EBVTATLA
• Description: Microprocessors - MPU 8536 ENCRYPTED
• Manufacturer: Freescale Semiconductor

Specifications of MPC8536EBVTATLA

• Product Category: Microprocessors - MPU
• Rohs: yes
• Processor Series: PowerQUICC III
• Core: e500
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 250 MHz
• Program Memory Size: 32 KB
• Data Ram Size: 512 KB
• Interface Type: I2C, USB
• Operating Supply Voltage: 3.3 V
• Maximum Operating Temperature: 0 C to + 105 C
• Mounting Style: SMD/SMT
• Package / Case: MAPBGA-783

2.6
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the chip. Note that DDR2
SDRAM is GV
2.6.1
This table provides the recommended operating conditions for the DDR SDRAM component(s) of the chip when interfacing to
DDR2 SDRAM.
This table provides the recommended operating conditions for the DDR SDRAM controller of the chip when interfacing to
DDR3 SDRAM.
Freescale Semiconductor
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
I/O supply voltage
I/O reference voltage
Input high voltage
Input low voltage
Output leakage current
Notes:
1. GV
2. MV
3. Output leakage is measured with all outputs disabled, 0 V
Peak-to-peak noise on MV
equal to MV
Peak-to-peak noise on MV
TT
DD
REF
DD
REF
is not applied directly to the chip. It is the supply to which far end signal termination is made and is expected to be
is expected to be within 50 mV of the DRAM GV
is expected to be within 50 mV of the DRAM GV
DDR2 and DDR3 SDRAM
is expected to be equal to 0.5 × GV
n is expected to be equal to 0.5 × GV
Parameter/Condition
Parameter/Condition
Table 13. DDR3 SDRAM Interface DC Electrical Characteristics for GV
DDR2 and DDR3 SDRAM DC Electrical Characteristics
DD
REF
(type) = 1.8 V and DDR3 SDRAM is GV
Table 12. DDR2 SDRAM DC Electrical Characteristics for GV
. This rail should track variations in the DC level of MV
MPC8535E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 5
OUT
OUT
= 0.280 V)
= 1.420 V)
REF
REF
n may not exceed ±1% of the DC value.
may not exceed ±2% of the DC value.
DD
DD
Symbol
, and to track GV
MV
Symbol
MV
GV
GV
, and to track GV
V
V
I
V
I
I
OZ
OH
V
V
I
OL
TT
OZ
REF
IH
IL
REF
DD
IH
IL
DD
n
DD
DD
DD
at all times.
≤
MV
at all times.
(type) = 1.5 V.
≤
MV
MV
0.49 × GV
V
0.49 × GV
V
OUT
REF
DD
OUT
REF
REF
–13.4
1.425
GND
DD
–0.3
13.4
Min
Min
–50
–50
1.7
n + 0.100
DC variations as measured at the receiver.
≤
+ 0.125
≤
– 0.04
DC variations as measured at the receiver.
GV
GV
REF
DD
DD
DD
DD
.
.
.
MV
MV
MV
0.51 × GV
0.51 × GV
REF
GV
REF
REF
GV
1.575
Max
DD
n – 0.100
Max
50
DD
1.9
50
—
—
DD
– 0.125
+ 0.04
+ 0.3
(typ) = 1.8 V
DD
DD
DD
(typ) = 1.5 V
Electrical Characteristics
Unit
Unit
μA
mA
mA
μA
V
V
V
V
V
V
V
V
V
Notes
Notes
—
—
—
—
—
—
1
2
3
1
2
3
4
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