S9S08SG8E2VTG Freescale Semiconductor, S9S08SG8E2VTG Datasheet - Page 315

• Manufacturer Part Number: S9S08SG8E2VTG
• Description: 8-bit Microcontrollers - MCU 9S08 UC W/ 8K 0.25UM SGF
• Manufacturer: Freescale Semiconductor

Specifications of S9S08SG8E2VTG

• Rohs: yes
• Core: S08
• Processor Series: MC9S08SG8
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 40 MHz
• Program Memory Size: 8 KB
• Data Ram Size: 8 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 2.7 V to 5.5 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: TSSOP-16
• Mounting Style: SMD/SMT
• A/d Bit Size: 10 bit
• A/d Channels Available: 12
• Interface Type: SCI, SPI
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Program Memory Type: Flash
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 2.7 V

A.13 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
1
2
3
4
5
Freescale Semiconductor
Electrical characteristics only apply to the temperature rated devices marked with x.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for FLASH is based on the intrinsic bit cell performance. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
Nu
10
m
The frequency of this clock is controlled by a software setting.
1
2
3

5
6
7
8
9
C
—
—
—
—
—
—
—
—
C
C
Supply voltage for
program/erase
Supply voltage for read
operation
Internal FCLK frequency
Internal FCLK period (1/f
Byte program time (random
location)
Byte program time (burst
mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T
T = 25C
L
L
to T
to T
2
Characteristic
3
H
H
= –40C to +125C
= –40C to +150C
5
2
2
2
FCLK
MC9S08SG8 MCU Series Data Sheet, Rev. 7
4
Table A-16. FLASH Characteristics
)
V
Symbol
prog/erase
V
n
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
Fcyc
FLPE
prog
Read
10,000
10,000
10,000
150
Min
2.7
2.7
15
5
100,000
Typical
20,000
4000
100
—
—
9
4
6.67
Max
200
5.5
5.5
—
—
—
—
Appendix A Electrical Characteristics
cycles
years
t
t
t
t
Unit
kHz
Fcyc
Fcyc
Fcyc
Fcyc
s
V
V
Stand
ard
Temp Rated
—
x
x
x
x
x
x
x
x
x
x
x
DD
supply.
Grade
AEC
—
0
x
x
x
x
x
x
x
x
x
x
x
1
311