S9S08SG8E2VTG Freescale Semiconductor, S9S08SG8E2VTG Datasheet - Page 52

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S9S08SG8E2VTG

Manufacturer Part Number
S9S08SG8E2VTG
Description
8-bit Microcontrollers - MCU 9S08 UC W/ 8K 0.25UM SGF
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of S9S08SG8E2VTG

Rohs
yes
Core
S08
Processor Series
MC9S08SG8
Data Bus Width
8 bit
Maximum Clock Frequency
40 MHz
Program Memory Size
8 KB
Data Ram Size
8 KB
On-chip Adc
Yes
Operating Supply Voltage
2.7 V to 5.5 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
TSSOP-16
Mounting Style
SMD/SMT
A/d Bit Size
10 bit
A/d Channels Available
12
Interface Type
SCI, SPI
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 40 C
Number Of Programmable I/os
16
Number Of Timers
2
Program Memory Type
Flash
Supply Voltage - Max
5.5 V
Supply Voltage - Min
2.7 V
Chapter 4 Memory
4.4
The MC9S08SG8 includes static RAM. The locations in RAM below 0x0100 can be accessed using the
more efficient direct addressing mode, and any single bit in this area can be accessed with the bit
manipulation instructions (BCLR, BSET, BRCLR, and BRSET). Locating the most frequently accessed
program variables in this area of RAM is preferred.
The RAM retains data when the MCU is in low-power wait, stop2, or stop3 mode. At power-on the
contents of RAM are uninitialized. RAM data is unaffected by any reset provided that the supply voltage
does not drop below the minimum value for RAM retention (V
For compatibility with M68HC05 MCUs, the HCS08 resets the stack pointer to 0x00FF. In the
MC9S08SG8, it is usually best to reinitialize the stack pointer to the top of the RAM so the direct page
RAM can be used for frequently accessed RAM variables and bit-addressable program variables. Include
the following 2-instruction sequence in your reset initialization routine (where RamLast is equated to the
highest address of the RAM in the Freescale Semiconductor-provided equate file).
When security is enabled, the RAM is considered a secure memory resource and is not accessible through
BDM or through code executing from non-secure memory. See
description of the security feature.
4.5
The FLASH memory is intended primarily for program storage. In-circuit programming allows the
operating program to be loaded into the FLASH memory after final assembly of the application product.
It is possible to program the entire array through the single-wire background debug interface. Because no
special voltages are needed for FLASH erase and programming operations, in-application programming
is also possible through other software-controlled communication paths. For a more detailed discussion of
in-circuit and in-application programming, refer to the HCS08 Family Reference Manual, Volume I,
Freescale Semiconductor document order number HCS08RMv1/D.
48
RAM
FLASH
LDHX
TXS
#RamLast+1
MC9S08SG8 MCU Series Data Sheet, Rev. 7
;point one past RAM
;SP<-(H:X-1)
RAM
Section 4.6,
).
“Security”, for a detailed
Freescale Semiconductor

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