CY62148EV30LL-45ZSXI Cypress Semiconductor Corp, CY62148EV30LL-45ZSXI Datasheet - Page 14

• Manufacturer Part Number: CY62148EV30LL-45ZSXI
• Description: IC SRAM 4MBIT 45NS 32TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62148EV30LL-45ZSXI

• Memory Size: 4M (512K x 8)
• Package / Case: 32-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 20 mA
• Organization: 512 K x 8
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3 V
• Memory Configuration: 512K X 8
• Supply Voltage Range: 2.2V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Density: 4Mb
• Access Time (max): 45ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 2.5/3.3V
• Address Bus: 19b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Supply Current: 20mA
• Operating Supply Voltage (min): 2.2V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2076; CY62148EV30LL-45ZSXI

Document History Page
Document #: 38-05576 Rev. *K
Document Title: CY62148EV30 MoBL
Document Number: 38-05576
Rev.
*A
*B
*C
*D
*E
**
223225
247373
414807
464503
833080
890962
ECN
Submission
See ECN
See ECN
See ECN
See ECN
See ECN
See ECN
Date
®
Change
Orig. of
4-Mbit (512 K × 8) Static RAM
NXR
SYT
ZSD
VKN
VKN
AJU
New data sheet
Changed from Advance Information to Preliminary
Moved Product Portfolio to Page 2
Changed V
Changed I
Changed typo in Data Retention Characteristics (t
Changed t
Changed t
45 ns Speed Bin
Changed t
Speed Bin
Changed t
Speed Bin
Changed t
45 ns Speed Bin
Changed t
Changed Ordering Information to include Pb-Free Packages
Changed from Preliminary information to Final
Changed the address of Cypress Semiconductor Corporation on Page #1 from
“3901 North First Street” to “198 Champion Court”
Removed 35ns Speed Bin
Removed “L” version of CY62148EV30
Changed ball C3 from DNU to NC.
Removed the redundant footnote on DNU.
Changed I
1.5 mA to 2 mA at f=1 MHz
Changed I
Changed I
A to 7 A.
Changed the AC test load capacitance value from 50pF to 30pF.
Changed I
Added I
Changed t
Changed t
Changed t
Changed t
Changed t
Updated the package diagram 36-pin VFBGA from *B to *C
Added 32-pin SOIC package diagram and pin diagram
Updated the ordering information table and replaced the Package Name column
with Package Diagram.
Included Automotive Range in product offering
Updated Thermal Resistance table
Updated the Ordering Information
Added footnote 8
Added V
Removed Automotive part and its related information
Added footnote 2 related to SOIC package
Added footnote 9 related to I
Added AC values for 55 ns Industrial-SOIC range
Updated Ordering Information table
CCDR
IL
SB1
spec for SOIC package
CCDR
OHA
HZOE
SCE
HZCE
SD
DOE
CC
CC
CCDR
LZOE
LZCE
HZCE
PWE
SD
CC
from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
typical value.
from 22 ns to 25 ns.
(max) value from 2 mA to 2.5 mA and I
(Typ) value from 12 mA to 15 mA at f = f
and I
stabilization time in footnote #7 from 100 s to 200 s
from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
from 15 to 18 ns for 35 ns Speed Bin
from 30 ns to 35 ns.
, t
from 3 ns to 5 ns
and t
from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns
from 22 ns to 18 ns
from 2.0 A to 2.5 A
from 2.5 A to 7 A.
HZWE
SB2
LZWE
from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for
Typ values from 0.7 A to 1 A and Max values from 2.5
from 6 ns to 10 ns
Description of Change
SB2
CY62148EV30 MoBL
R
) from 100 s to t
CC
max
(Typ) value from
Page 14 of 15
RC
ns
®
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