CY62148EV30LL-45ZSXI Cypress Semiconductor Corp, CY62148EV30LL-45ZSXI Datasheet - Page 6
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CY62148EV30LL-45ZSXI
Manufacturer Part Number
CY62148EV30LL-45ZSXI
Description
IC SRAM 4MBIT 45NS 32TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet
1.CY62148EV30LL-45BVXI.pdf
(15 pages)
Specifications of CY62148EV30LL-45ZSXI
Memory Size
4M (512K x 8)
Package / Case
32-TSOP II
Format - Memory
RAM
Memory Type
SRAM
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
45 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
20 mA
Organization
512 K x 8
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3 V
Memory Configuration
512K X 8
Supply Voltage Range
2.2V To 3.6V
Memory Case Style
TSOP
No. Of Pins
44
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Density
4Mb
Access Time (max)
45ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
19b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Supply Current
20mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2076
CY62148EV30LL-45ZSXI
CY62148EV30LL-45ZSXI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY62148EV30LL-45ZSXI
Manufacturer:
CYPRESS
Quantity:
117 000
Part Number:
CY62148EV30LL-45ZSXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
CY62148EV30LL-45ZSXIT
Manufacturer:
TI
Quantity:
15
Company:
Part Number:
CY62148EV30LL-45ZSXIT
Manufacturer:
CYPRESS
Quantity:
455
Part Number:
CY62148EV30LL-45ZSXIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Switching Characteristics
(Over the Operating Range)
Notes
Document #: 38-05576 Rev. *K
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
17. Test Conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of V
18. SOIC package is available only in 55 ns speed bin.
19. At any given temperature and voltage condition, t
20. t
21. The internal write time of the memory is defined by the overlap of WE, CE = V
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
pulse levels of 0 to V
a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
HZOE
Parameter
, t
HZCE
[21]
, and t
HZWE
CC(typ)
transitions are measured when the output enter a high impedance state.
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power Up
CE HIGH to Power Up
Write Cycle Time
CE LOW to Write End
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
, and output loading of the specified I
[17]
Description
[19]
[19]
HZCE
[19, 20]
[19, 20]
[19, 20]
[19]
is less than t
OL
/I
LZCE
OH
as shown in the
, t
HZOE
-45 (Industrial/Auto-A)
IL
Min
. All signals must be ACTIVE to initiate a write and any of these signals can terminate
45
10
10
45
35
35
35
25
10
is less than t
5
0
0
0
0
AC Test Loads and Waveforms on page 5.
LZOE
, and t
Max
45
45
22
18
18
45
18
HZWE
is less than t
Min
55
10
10
55
40
40
40
25
10
CY62148EV30 MoBL
5
0
0
0
0
LZWE
-55
for any given device.
[18]
Max
55
55
25
20
20
55
20
CC(typ)
Page 6 of 15
Unit
/2, input
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
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