NAND16GW3F2AN6E NUMONYX, NAND16GW3F2AN6E Datasheet - Page 47
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NAND16GW3F2AN6E
Manufacturer Part Number
NAND16GW3F2AN6E
Description
IC FLASH 16GBIT SLC 48TSOP
Manufacturer
NUMONYX
Datasheet
1.NAND16GW3F2AN6E.pdf
(65 pages)
Specifications of NAND16GW3F2AN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
16G (2G x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
NAND08GW3F2A, NAND16GW3F2A
9.4
Wear-leveling algorithm
For write-intensive applications, it is recommended to implement a wear-leveling algorithm
to monitor and spread the number of write cycles per block.
In memories that do not use a wear-leveling algorithm, not all blocks get used at the same
rate. The wear-leveling algorithm ensures that equal use is made of all the available write
cycles for each block.
There are two wear-leveling levels:
1.
2.
The second level wear-leveling is triggered when the difference between the maximum and
the minimum number of write cycles per block reaches a specific threshold.
First level wear-leveling, where new data is programmed to the free blocks that have
had the fewest write cycles
Second level wear-leveling, where long-lived data is copied to another block so that the
original block can be used for more frequently changed data.
Software algorithms
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