IDT70T3339S133BFI IDT, Integrated Device Technology Inc, IDT70T3339S133BFI Datasheet - Page 21
IDT70T3339S133BFI
Manufacturer Part Number
IDT70T3339S133BFI
Description
IC SRAM 9MBIT 133MHZ 208FBGA
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet
1.IDT70T3339S133BFI.pdf
(27 pages)
Specifications of IDT70T3339S133BFI
Format - Memory
RAM
Memory Type
SRAM - Dual Port, Synchronous
Memory Size
9M (512K x 18)
Speed
133MHz
Interface
Parallel
Voltage - Supply
2.4 V ~ 2.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
208-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
70T3339S133BFI
800-1378
800-1378
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IDT70T3339S133BFI
Manufacturer:
IDT
Quantity:
850
Company:
Part Number:
IDT70T3339S133BFI
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Company:
Part Number:
IDT70T3339S133BFI8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Timing Waveform - Entering Sleep Mode
Timing Waveform - Exiting Sleep Mode
NOTES:
1. CE
2. All timing is same for Left and Right ports.
3. CE
4. CE
5. The device must be in Read Mode (R/W High) when exiting sleep mode. Outputs are active but data is not valid until the following cycle.
IDT70T3339/19/99S
High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM
1 =
0
0
has to be deactivated (CE
has to be deactivated (CE
V
IH.
DATA
R/W
R/W
OE
OUT
0
0
= V
= V
(4)
IH
IH
) three cycles prior to asserting ZZ (ZZx = V
) one cycle prior to de-asserting ZZ (ZZx = V
6.42
21
(5)
IH
IL
(1,2)
) and held for two cycles after asserting ZZ (ZZx = V
) and held for three cycles after de-asserting ZZ (ZZx = V
(1,2)
(3)
Industrial and Commercial Temperature Ranges
An
(5)
An+1
Dn
IH
).
IL
Dn+1
).