CY7C1308DV25C-167BZC Cypress Semiconductor Corp, CY7C1308DV25C-167BZC Datasheet - Page 13

• Manufacturer Part Number: CY7C1308DV25C-167BZC
• Description: IC SRAM 9MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1308DV25C-167BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR
• Memory Size: 9M (256K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TAP Controller Block Diagram
TAP Electrical Characteristics
TAP AC Switching Characteristics
Document #: 001-04310 Rev. *A
V
V
V
V
V
V
I
t
t
t
t
Setup Times
t
t
t
Notes
X
TCYC
TF
TH
TL
TMSS
TDIS
CS
26. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
27. t
28. Test conditions are specified using the load in TAP AC test conditions. t
OH1
OH2
OL1
OL2
IH
IL
Parameter
Parameter
TDI
CS
and t
TCK
TMS
CH
refer to the setup and hold time requirements of latching data from the boundary scan register.
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
TCK Clock LOW
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and Output Load Current
Selection
Circuitry
Description
106
Over the Operating Range
31
Over the Operating Range
Boundary Scan Register
30
.
PRELIMINARY
Identification Register
Instruction Register
Description
29
.
R
I
I
I
I
GND ≤ V
TAP Controller
OH
OH
OL
OL
/t
.
.
F
= 1 ns.
= 2.0 mA
= 100 μA
= −2.0 mA
= −100 μA
Test Conditions
.
.
I
≤ V
Bypass Register
[10, 12, 26]
2
2
2
[27, 28]
DDQ
1
1
1
0
0
0
0
–0.3
Min
1.7
2.1
1.7
–5
Selection
Circuitry
CY7C1308DV25C
Min
100
40
40
10
10
10
V
DD
Max
0.7
0.2
0.7
5
+ 0.3
Max
10
Page 13 of 18
TDO
Unit
Unit
MHz
μA
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
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