STW36N55M5 STMicroelectronics, STW36N55M5 Datasheet - Page 10

• Manufacturer Part Number: STW36N55M5
• Description: MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh V FET
• Manufacturer: STMicroelectronics

Specifications of STW36N55M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20.8 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247
• Gate Charge Qg: 72 nC
• Power Dissipation: 190 W

Package mechanical data
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10/15
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.
Dim.
L20
L30
∅
D1
H1
b1
e1
J1
L1
D
Q
A
E
F
b
c
e
L
P
®
packages, depending on their level of environmental compliance. ECOPACK
TO-220 type A mechanical data
15.25
Min.
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
Doc ID 022902 Rev 2
16.40
28.90
Typ.
1.27
mm
STP36N55M5, STW36N55M5
15.75
10.40
Max.
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
®