STW36N55M5 STMicroelectronics, STW36N55M5 Datasheet - Page 6

• Manufacturer Part Number: STW36N55M5
• Description: MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh V FET
• Manufacturer: STMicroelectronics

Specifications of STW36N55M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20.8 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247
• Gate Charge Qg: 72 nC
• Power Dissipation: 190 W

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
100
100
0.1
0.1
(A)
(A)
10
10
I
I
I
D
D
D
1
1
0.1
0.1
(A)
10
70
60
50
40
30
20
0
0
Electrical characteristics (curves)
Safe operating area for TO-220
Safe operating area for TO-247
Output characteristics
5
1
1
V
GS
=10V
10
10
10
15
20
100
100
7V
25
V
V
6V
DS
DS
(V)
(V)
Doc ID 022902 Rev 2
V
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
AM14928v1
AM14929v1
AM14930v1
DS
(V)
Figure 3.
Figure 5.
Figure 7.
I
D
(A)
70
60
50
40
20
10
30
0
3
Thermal impedance for TO-220
Thermal impedance for TO-247
Transfer characteristics
4
5
STP36N55M5, STW36N55M5
V
DS
=25V
6
7
8
9
V
AM14931v1
GS
(V)