STW36N55M5 STMicroelectronics, STW36N55M5 Datasheet - Page 8

• Manufacturer Part Number: STW36N55M5
• Description: MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh V FET
• Manufacturer: STMicroelectronics

Specifications of STW36N55M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20.8 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247
• Gate Charge Qg: 72 nC
• Power Dissipation: 190 W

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/15
Figure 14. Source-drain diode forward
Figure 16. Switching losses vs gate resistance
(V)
V
0.6
0.4
0.2
0.8
1.2
1.0
(μJ)
500
400
300
200
100
600
SD
0
E
0
0
0
characteristics
(1)
T
J
V
V
I
=150°C
D
DD
GS
10
=22A
=10V
=400V
T
10
J
=-50°C
20
20
30
30
40
T
J
=25°C
40
50
Eon
Eoff
I
Doc ID 022902 Rev 2
SD
AM14936v1
AM05461v3
(A)
R
G
(Ω)
Figure 15. Normalized B
(norm)
0.98
0.96
0.92
1.08
1.06
1.04
1.02
0.94
1.00
V
DS
-50
-25
0
STP36N55M5, STW36N55M5
I
D
25
= 1mA
VDSS
50
75
vs temperature
100
T
J
(°C)
AM10399v1