STW36N55M5 STMicroelectronics, STW36N55M5 Datasheet - Page 9

• Manufacturer Part Number: STW36N55M5
• Description: MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh V FET
• Manufacturer: STMicroelectronics

Specifications of STW36N55M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20.8 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247
• Gate Charge Qg: 72 nC
• Power Dissipation: 190 W

STP36N55M5, STW36N55M5
3
Figure 17. Switching times test circuit for
Figure 19. Test circuit for inductive load
Figure 21. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 022902 Rev 2
Figure 18. Gate charge test circuit
Figure 20. Unclamped inductive load test
Figure 22. Switching time waveform
Vgs
Vds
Id
10%Vds
90%Vds
90%Vgs
on
on
Vgs(I(t))
circuit
))
Tdelay-off
-off
Trise
Trise
Tcross -over
Tfall
Tfall
-
Concept waveform for Inductive Load Turn-off
Test circuits
AM05540v2
10%Id
90%Id
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