STW36N55M5 STMicroelectronics, STW36N55M5 Datasheet - Page 7

• Manufacturer Part Number: STW36N55M5
• Description: MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh V FET
• Manufacturer: STMicroelectronics

Specifications of STW36N55M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20.8 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247
• Gate Charge Qg: 72 nC
• Power Dissipation: 190 W

STP36N55M5, STW36N55M5
Figure 8.
Figure 10. Capacitance variations
Figure 12. Normalized gate threshold voltage
10000
(norm)
V
1000
GS(th)
1.00
0.80
0.70
1.10
V
0.90
100
(V)
(pF)
12
10
10
GS
C
8
6
4
2
0
-50
1
0
0.1
Gate charge vs gate-source voltage Figure 9.
vs temperature
-25
10
V
DS
20
0
1
V
30
I
25
DD
D
=16.5A
=440V
40
I
10
D
50
=250µA
50
75
100
100
60
70
T
V
J
(°C)
Doc ID 022902 Rev 2
Q
DS
AM14932v1
g
AM14934v1
AM05459v3
(nC)
(V)
150
100
V
400
300
250
200
50
450
350
0
Ciss
Coss
Crss
DS
(V)
Figure 11. Output capacitance stored energy
Figure 13. Normalized on-resistance vs
R
(norm)
R
0.055
0.045
0.065
DS(on)
DS(on)
0.05
E
0.06
(µJ)
(Ω)
oss
1.9
1.7
1.5
1.3
0.9
0.7
10
0.5
2.1
1.1
2
8
6
4
0
-50
0
0
Static drain-source on-resistance
temperature
-25
100
5
0
10
200
V
GS
25
15
Electrical characteristics
=10V
V
I
300
D
50
GS
=16.5V
20
=10V
75
400
25
100
500
30
T
J
(°C)
AM14933v1
AM14935v1
AM05460v3
V
I
DS
D
(A)
(V)
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