STW36N55M5 STMicroelectronics, STW36N55M5 Datasheet - Page 5

• Manufacturer Part Number: STW36N55M5
• Description: MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh V FET
• Manufacturer: STMicroelectronics

Specifications of STW36N55M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20.8 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247
• Gate Charge Qg: 72 nC
• Power Dissipation: 190 W

STP36N55M5, STW36N55M5
Table 7.
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
I
I
t
SD
t
c(off)
RRM
RRM
I
d(V)
t
Q
Q
r(V)
SD
t
t
f(i)
rr
rr
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 022902 Rev 2
I
I
V
I
V
(see
V
R
(see
Figure
SD
SD
SD
DD
DD
DD
G
= 33 A, V
= 33 A, di/dt = 100 A/µs
= 33 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure 19
Test conditions
Test conditions
22)
22)
GS
D
GS
j
and
= 150 °C
= 22 A,
= 0
= 10 V
Figure
22)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
334
406
31
35
56
13
13
17
5
7
Max. Unit
Max
132
1.5
33
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/15
A
A
V
A
A