STGFW35HF60W STMicroelectronics, STGFW35HF60W Datasheet - Page 10

• Manufacturer Part Number: STGFW35HF60W
• Description: IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
• Manufacturer: STMicroelectronics

Specifications of STGFW35HF60W

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 36 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 88 W
• Package / Case: TO-3PF
• Continuous Collector Current Ic Max: 18 A
• Mounting Style: Through Hole

Package mechanical data
4
10/17
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at:
ECOPACK
Table 8.
Dim.
Dia
G1
F1
F2
L2
L3
L4
L5
L6
L7
D
G
H
A
B
E
F
®
®
packages, depending on their level of environmental compliance. ECOPACK
is an ST trademark.
TO-220FP mechanical data
Min.
0.45
0.75
1.15
1.15
4.95
28.6
15.9
4.4
2.5
2.5
2.4
9.8
2.9
10
9
3
Doc ID 17490 Rev 3
STGF35HF60W, STGW35HF60W, STGFW35HF60W
Typ.
mm
16
www.st.com
Max.
2.75
1.70
1.70
10.4
30.6
10.6
16.4
4.6
2.7
0.7
5.2
2.7
3.6
9.3
3.2
1
.
®