STGFW35HF60W STMicroelectronics, STGFW35HF60W Datasheet - Page 8

• Manufacturer Part Number: STGFW35HF60W
• Description: IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
• Manufacturer: STMicroelectronics

Specifications of STGFW35HF60W

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 36 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 88 W
• Package / Case: TO-3PF
• Continuous Collector Current Ic Max: 18 A
• Mounting Style: Through Hole

Electrical characteristics
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Figure 14. Thermal impedance for TO-247
Figure 16. Thermal impedance for TO-3PF
1.00E+00
1.00E-01
1.00E-02
1.00E-03
1.E-05
d 0.02
d 0.01
d 0.5
d 0.2
d 0.1
d 0.05
d 0
1.E-04
1.E-03
1.E-02
s
1.E-01
d
1.E+00
1.E+01
AM12767v1
Doc ID 17490 Rev 3
1.E+02
STGF35HF60W, STGW35HF60W, STGFW35HF60W
Figure 15. Thermal impedance for TO-220FP