STGFW35HF60W STMicroelectronics, STGFW35HF60W Datasheet - Page 5

• Manufacturer Part Number: STGFW35HF60W
• Description: IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
• Manufacturer: STMicroelectronics

Specifications of STGFW35HF60W

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 36 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 88 W
• Package / Case: TO-3PF
• Continuous Collector Current Ic Max: 18 A
• Mounting Style: Through Hole

STGF35HF60W, STGW35HF60W, STGFW35HF60W
Table 6.
Table 7.
1. Eon is the turn-on losses when a typical diode is used in the test circuit in
Symbol
Symbol
(di/dt)
(di/dt)
t
t
E
E
t
t
t
t
r
r
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C). Eon includes diode recovery energy.
d
d
(V
(V
d(on)
d(on)
E
E
E
E
on
on
(
(
t
t
t
t
off
off
off
off
r
r
f
f
ts
ts
off
off
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
Doc ID 17490 Rev 3
V
R
(see
V
R
T
V
R
(see
V
R
T
V
R
(see
V
R
T
(see
CC
CC
J
G
G
CC
CC
CC
CC
G
G
J
GE
GE
J
= 125 °C (see
= 125 °C (see
= 125 °C
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 400 V, I
= 400 V, I
Figure
= 400 V, I
= 400 V, I
= 400 V, I
= 400 V, I
= 10 Ω, V
= 10 Ω, V
Figure
Figure
Figure
Test conditions
Test conditions
19)
17)
17)
17)
GE
GE
GE
GE
C
C
C
C
C
GE
C
GE
= 15 V,
= 15 V,
= 20 A
= 20 A
= 15 V,
= 15 V,
= 20 A
= 20 A
= 20 A,
= 20 A,
Figure
= 15 V
=15 V,
Figure
19)
17)
Figure 19
Electrical characteristics
Min.
Min.
-
-
-
-
-
-
. If the IGBT is offered
1650
1600
Typ.
Typ.
290
185
475
420
350
770
175
225
30
15
30
15
30
40
50
70
Max.
Max.
530
-
-
-
-
A/µs
A/µs
Unit
Unit
µJ
µJ
µJ
µJ
µJ
µJ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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