STGFW35HF60W STMicroelectronics, STGFW35HF60W Datasheet - Page 6

• Manufacturer Part Number: STGFW35HF60W
• Description: IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
• Manufacturer: STMicroelectronics

Specifications of STGFW35HF60W

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 36 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 88 W
• Package / Case: TO-3PF
• Continuous Collector Current Ic Max: 18 A
• Mounting Style: Through Hole

Electrical characteristics
2.1
6/17
Figure 2.
Figure 4.
Figure 6.
V
(norm)
CE(sat)
1.6
1.4
1.2
0.8
0.6
0.4
I
C
200
150
100
1
(A)
50
(norm)
0
0
V
1.05
0.95
CES
1.1
0.9
0
1
-50
Electrical characteristics (curves)
Output characteristics
Normalized V
Normalized breakdown voltage vs.
temperature
T
J
= -50 ºC
V
20
2
GE
= 15 V
0
T
J
V
= 25 ºC
4
GE
= 15 V
40
CE(sat)
50
I
C
T
= 1 mA
11 V
6
J
= 150 ºC
V
GE
vs. I
60
= 6 V
10 V
100
9 V
8 V
7 V
8
C
V
I
CE
C
Doc ID 17490 Rev 3
T
(A)
J
(V)
80
10
150
(°C)
STGF35HF60W, STGW35HF60W, STGFW35HF60W
Figure 3.
Figure 5.
Figure 7.
V
(norm)
CE(sat)
1.6
1.4
1.2
0.8
0.6
(norm)
I
1
V
C
200
150
100
-50
(A)
GE(th)
50
1.2
1.1
0.9
0.8
0.7
0.6
0
I
1
10 A
0
C
-50
= 5 A
Transfer characteristics
Normalized gate threshold voltage
vs. temperature
Normalized V
0
3
0
V
V
CE
GE
= 10 V
I
C
= 15 V
50
V
= 250 µA
CE(sat)
GE
6
50
= V
CE
vs. temperature
100
9
100
I
I
I
C
C
C
20 A
= 80 A
= 60 A
= 40 A
30 A
V
GE
T
J
T
(V)
(°C)
12
150
J
150
(°C)