VS-GB15XP120KTPBF Vishay Semiconductors, VS-GB15XP120KTPBF Datasheet

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VS-GB15XP120KTPBF

Manufacturer Part Number
VS-GB15XP120KTPBF
Description
IGBT Transistors 1200 Volt 30 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-GB15XP120KTPBF

Product Category
IGBT Transistors
Rohs
yes
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
MTP-14
Continuous Collector Current Ic Max
30 A
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Factory Pack Quantity
105
Document Number: 93913
Revision: 03-Aug-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
(including diode and IGBT)
V
CE(on)
t
I
C
sc
typical at V
at T
at T
V
C
J
CES
= 100 °C
= 150 °C
GE
1200 V NPT IGBT and HEXFRED
Three Phase Inverter Module in MTP Package
= 15 V
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
MTP
For technical questions within your region, please contact one of the following:
> 10 μs
1200 V
SYMBOL
2.51 V
15 A
V
V
V
I
I
I
P
ISOL
CES
CM
LM
FM
I
I
GE
C
F
D
T
T
T
Any terminal to case, t = 1 min
T
T
C
C
C
C
C
= 25 °C
= 100 °C
= 100 °C
= 25 °C
= 100 °C
TEST CONDITIONS
FEATURES
• Generation 5 NPT 1200 V IGBT technology
• HEXFRED
• Very low conduction and switching losses
• Optional SMT thermistor (NTC)
• Aluminum oxide DBC
• Very low stray inductance design for high speed operation
• Short circuit 10 μs
• Square RBSOA
• Operating frequencies 8 kHz to 60 kHz
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for inverter motor drive applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
recovery
DiodesEurope@vishay.com
®
®
diode with ultrasoft reverse
Diodes, 15 A
Vishay Semiconductors
GB15XP120KTPbF
MAX.
1200
2500
± 20
187
30
15
60
60
15
30
75
www.vishay.com
UNITS
W
V
A
V
1

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VS-GB15XP120KTPBF Summary of contents

Page 1

... 100 ° Any terminal to case min ISOL ° 100 °C C DiodesEurope@vishay.com GB15XP120KTPbF Vishay Semiconductors ® Diodes ® diode with ultrasoft reverse MAX. UNITS 1200 ± 20 2500 187 75 www.vishay.com ...

Page 2

... GB15XP120KTPbF Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Temperature coefficient of V (BR)CES Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Forward transconductance Collector to emitter leaking current Diode forward voltage drop Gate to emitter leakage current SWITCHING CHARACTERISTICS (T PARAMETER ...

Page 3

... Revision: 03-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, ® Diodes TEST CONDITIONS ( ° °C 0 (1)( °C 1 TEST CONDITIONS T J Stg thJC Heatsink compound thermal conductivity = 1 W/mK thCS GB15XP120KTPbF Vishay Semiconductors MIN. TYP. MAX 4000 MIN. TYP. MAX 0. Vge=18V Vge=15V ...

Page 4

... L = 500 μ 600  TOT OFF Fig Typical Energy Loss vs 125 ° 500 μ 600 OFF 100 ...

Page 5

... Case Temperature Document Number: 93913 For technical questions within your region, please contact one of the following: Revision: 03-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, ® Diodes 120 Cies Coes Cres 30 40 Fig Power Dissipation vs. Case Temperature CE 100 0.01 80 100 GE 100 120 160 GB15XP120KTPbF Vishay Semiconductors 90 ...

Page 6

... Rg=47 Ω (A) Fig Typical Diode I vs 125 ° Fig Typical Diode I vs 125 ° 1300 = 600 V; Document Number: 93913 DiodesEurope@vishay.com Revision: 03-Aug-10 Ω ...

Page 7

... Ci= τi/Ri Ci i/Ri 1E-04 1E-03 1E- Rectangular Pulse Duration (sec) DiodesEurope@vishay.com GB15XP120KTPbF Vishay Semiconductors τ i (sec) Ri (°C/W) 0.196 0.000547 0.515 0.025615 0.389 0.037176 Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + tc 1E-01 1E+00 τ i (sec) Ri (°C/W) 0.390 0.001245 1.023 0.03327 ...

Page 8

... GB15XP120KTPbF Vishay Semiconductors ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions www.vishay.com For technical questions within your region, please contact one of the following: 8 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED 120 ...

Page 9

... Unused terminals are not assembled in the package Document Number: 95175 Revision: 18-Mar-08 MTP Ø 5 Ø 1.1 31 1.2 ± 0.1 7.2 ± 0.1 7.8 ± 0.1 5.7 ± 0.1 3 ± 0.1 8.7 ± 0.1 6 ± 0.1 8.5 ± 0.1 3 ± 0.1 39.5 ± 0.1 44.5 48.7 1.3 63.5 ± 0.25 For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 1.8 5.4 ± 0.1 www.vishay.com 1 ...

Page 10

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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