VS-GB15XP120KTPBF Vishay Semiconductors, VS-GB15XP120KTPBF Datasheet - Page 3

• Manufacturer Part Number: VS-GB15XP120KTPBF
• Description: IGBT Transistors 1200 Volt 30 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB15XP120KTPBF

• Product Category: IGBT Transistors
• Rohs: yes
• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: MTP-14
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 105

Notes
(1)
(2)
Document Number: 93913
Revision: 03-Aug-10
THERMISTOR SPECIFICATIONS (T CODE ONLY)
PARAMETER
Resistance
Sensitivity index of the
thermistor material
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction
temperature range
Storage temperature range
Junction to case
Case to sink per module
Mounting torque
Weight
T
R
------ -
R
0
0
1
, T
=
60
40
20
1
0
are thermistor´s temperatures
exp
0

Fig. 1 - Typical Output Characteristics
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V


----- -
T
1
0
–
----- -
T
1
1


2
1200 V NPT IGBT and HEXFRED
Module
Three Phase Inverter Module in MTP Package
T
Diode
Vce (V)
[e-mail], [e-mail],
J
IGBT
= 25 °C
For technical questions within your region, please contact one of the following:
SYMBOL
SYMBOL
4

R
R
R
T
T
thCS
thJC
0
(1)(2)
Stg
J
(1)
T
T
T
Heatsink compound thermal conductivity = 1 W/mK
0
0
1
6
= 25 °C
= 25 °C
= 85 °C
TEST CONDITIONS
TEST CONDITIONS
®
Diodes, 15 A
60
40
20
0
[e-mail]
0
Fig. 2 - Typical Output Characteristics
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
Vishay Semiconductors
2
GB15XP120KTPbF
T
J
Vce (V)
= 125 °C
MIN.
MIN.
- 40
- 40
-
-
-
-
-
-
-
-
4
TYP.
4000
TYP.
0.50
0.1
65
30
-
-
-
-
-
MAX.
MAX.
www.vishay.com
150
125
1.1
1.7
4
-
-
-
-
-
6
UNITS
UNITS
°C/W
Nm
k
°C
K
g
3