VS-GB15XP120KTPBF Vishay Semiconductors, VS-GB15XP120KTPBF Datasheet - Page 8

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VS-GB15XP120KTPBF

Manufacturer Part Number
VS-GB15XP120KTPBF
Description
IGBT Transistors 1200 Volt 30 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-GB15XP120KTPBF

Product Category
IGBT Transistors
Rohs
yes
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
MTP-14
Continuous Collector Current Ic Max
30 A
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Factory Pack Quantity
105
GB15XP120KTPbF
Vishay Semiconductors
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
www.vishay.com
8
Dimensions
Device code
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
1
2
3
4
5
6
7
GB
13
12
1200 V NPT IGBT and HEXFRED
1
1
Three Phase Inverter Module in MTP Package
2
-
-
-
-
-
-
-
15
7
8
9
LINKS TO RELATED DOCUMENTS
2
IGBT module
Nominal current rating (15 = 15 A)
Circuit configuration (XP = Three phase inverter)
Voltage code (120 = 1200 V)
Speed/type (K = Ultrafast IGBT/inverter motor drive application)
Special option:
PbF = Lead (Pb)-free
None = No special option
T = Thermistor
XP
3
10
120
5
6
4
K
5
11
3
4
DiodesEurope@vishay.com
T
6
www.vishay.com/doc?95175
®
PbF
Diodes, 15 A
7
Document Number: 93913
Revision: 03-Aug-10

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