VS-GB15XP120KTPBF Vishay Semiconductors, VS-GB15XP120KTPBF Datasheet - Page 2

• Manufacturer Part Number: VS-GB15XP120KTPBF
• Description: IGBT Transistors 1200 Volt 30 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB15XP120KTPBF

• Product Category: IGBT Transistors
• Rohs: yes
• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: MTP-14
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 105

GB15XP120KTPbF
Vishay Semiconductors
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Temperature coefficient of V
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of
threshold voltage
Forward transconductance
Collector to emitter leaking current
Diode forward voltage drop
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse BIAS safe operating area
Short circuit safe operating area
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery energy
Diode reverse recovery time
Diode peak reverse current
[e-mail], [e-mail],
(BR)CES
For technical questions within your region, please contact one of the following:
V
1200 V NPT IGBT and HEXFRED
V
Three Phase Inverter Module in MTP Package
SYMBOL
SYMBOL
V
(BR)CES
RBSOA
SCSOA
V
GE(th)
V
(BR)CES
t
t
C
C
I
I
Q
Q
C
E
CE(on)
V
E
E
E
E
GE(th)
d(on)
d(off)
GES
Q
E
E
g
CES
t
I
t
t
oes
rec
FM
off
off
res
on
on
ies
rr
rr
ge
gc
ts
ts
J
fe
r
f
g
/T
J
= 25 °C unless otherwise specified)
/T
= 25 °C unless otherwise specified)
J
J
I
V
V
I
R
Energy losses include tail and
diode reverse recovery
I
R
Energy losses include tail and
diode reverse recovery
I
L = 500 μH, L
R
T
R
V
T
V
V
f = 1 MHz
I
L = 500 μH, L
R
V
V
V
V
V
V
I
V
V
V
V
I
I
I
I
V
C
C
C
C
C
C
F
F
F
F
J
J
CC
GE
CC
GE
CC
GE
GE
GE
GE
GE
GE
CE
CE
GE
GE
GE
g
g
g
g
g
= 15 A, V
= 30 A, V
= 15 A, V
= 30 A, V
= 15 A
= 15 A, V
= 15 A, V
= 15 A, V
= 15 A, V
= 250 μA
= 150 °C, I
= 150 °C, V
= 10 , L = 500 μH, T
= 10 , L = 500 μH, T
= 10 , T
= 10 , V
= 10 , T
= 0 V, I
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= V
= 25 V, I
= 0 V, V
= 0 V, V
= ± 20 V
= 600 V
= 15 V
= 600 V, V
= 0 V
= 30 V
GE
TEST CONDITIONS
TEST CONDITIONS
, I
C
C
GE
GE
GE
GE
CC
CC
CC
CC
C
CE
CE
J
GE
J
C
C
C
C
C
= 250 μA
= 1 mA
S
C
S
= 1 mA
= 125 °C
= 125 °C
P
= 0 V
= 0 V
= 0 V, T
= 0 V, T
= 15 A
= 30 A
= 15 A, T
= 30 A, T
= 15 A
= 600 V, V
= 600 V, V
= 600 V, V
GE
= 600 V, V
= 1200 V
= 1200 V, T
= 100 nH
= 60 A
= 100 nH
= 15 V to 0
= 1200 V, R
= + 15 V to 0
J
J
J
J
= 125 °C
= 125 °C
J
J
= 125 °C
= 125 °C
GE
GE
GE
GE
[e-mail]
= 25 °C
= 125 °C
J
g
= 125 °C
= 15 V
= 15 V
= 15 V
= 15 V
= 10 
®
Diodes, 15 A
MIN.
MIN.
1200
10
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
0.990
0.827
1.817
1.352
1.138
2.490
TYP.
TYP.
1302
1.11
2.51
3.36
2.94
4.12
2.13
2.70
2.27
3.06
- 10
134
227
717
819
98
12
46
95
18
38
96
35
12
-
-
-
-
-
-
Document Number: 93913
Revision: 03-Aug-10
MAX.
± 250
MAX.
1.485
1.241
2.726
2.028
1.707
3.735
1953
1076
1000
2.70
3.66
3.16
4.46
2.58
3.33
2.75
3.76
250
146
143
200
341
17
69
27
57
6
-
-
-
-
-
-
-
-
UNITS
mV/°C
UNITS
V/°C
nC
mJ
mJ
μA
nA
pF
ns
μs
μJ
ns
V
V
S
V
A