VS-GB15XP120KTPBF Vishay Semiconductors, VS-GB15XP120KTPBF Datasheet - Page 5

• Manufacturer Part Number: VS-GB15XP120KTPBF
• Description: IGBT Transistors 1200 Volt 30 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB15XP120KTPBF

• Product Category: IGBT Transistors
• Rohs: yes
• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: MTP-14
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 105

Document Number: 93913
Revision: 03-Aug-10
10000
1000
100
16
12
32
24
16
10
8
4
0
8
0
Fig. 11 - Maximum DC Collector Current vs.
0
0
0
Fig. 10 - Typical Gate Charge vs. V
Fig. 9 - Typical Capacitance vs. V
20
Q
G
40
10
V
, Total Gate Charge (nC)
Case Temperature
GE
1200 V NPT IGBT and HEXFRED
= 0 V; f = 1 MHz
Three Phase Inverter Module in MTP Package
40
I
CE
[e-mail], [e-mail],
Vce (V)
Tc (°C)
For technical questions within your region, please contact one of the following:
= 15 A
80
20
60
600V
120
30
80
Cres
Cies
Coes
CE
GE
100
160
40
®
Diodes, 15 A
0.01
120
100
100
Fig. 12 - Power Dissipation vs. Case Temperature
0.1
90
60
30
10
10
0
[e-mail]
1
1
10
0
1
Fig. 14 - Reverse BIAS SOA
T
T
40
10
Fig. 13 - Forward SOA
J
C
= 150 °C, V
= 25 °C, T
100
Vishay Semiconductors
GB15XP120KTPbF
(IGBT only)
Tc (°C)
Vce (V)
Vce (V)
100
80
J
GE
 150 °C
1000
= 15 V
1000
120
100 µs
20 µs
DC
1 ms
10 ms
www.vishay.com
10000
10000
160
5