SIRA06DP-T1-GE3 Vishay/Siliconix, SIRA06DP-T1-GE3 Datasheet

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SIRA06DP-T1-GE3

Manufacturer Part Number
SIRA06DP-T1-GE3
Description
MOSFET 30V 2.5mOhm@10V 40A N-Ch G-IV
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SIRA06DP-T1-GE3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
2.2 V
Continuous Drain Current
40 A
Resistance Drain-source Rds (on)
2.5 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO-8
Minimum Operating Temperature
- 55 C
Power Dissipation
27.7 W
Part # Aliases
SIRA06DP-GE3

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Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
Document Number: 63715
S12-2118-Rev. B, 03-Sep-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
30
(V)
Ordering Information:
SiRA06DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
C
D
6.15 mm
= 25 °C.
0.0035 at V
0.0025 at V
R
7
DS(on)
D
6
D
() (Max.)
5
GS
GS
D
J
= 4.5 V
= 10 V
= 150 °C)
b, f
PowerPAK
Bottom View
1
S
N-Channel 30 V (D-S) MOSFET
For technical questions, contact:
2
S
I
®
3
D
S
SO-8
(A)
40
40
5.15 mm
This document is subject to change without notice.
4
a, g
G
d, e
A
Q
= 25 °C, unless otherwise noted)
22.5 nC
Steady State
g
T
T
T
T
T
T
L =0.1 mH
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t  10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
pmostechsupport@vishay.com
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Material categorization:
• High Power Density DC/DC
• VRMs and Embedded DC/DC
Symbol
Symbol
T
R
R
For definitions of compliance please see
www.vishay.com/doc?99912
Synchronous Rectification
J
V
V
E
I
I
P
, T
I
DM
thJC
I
AS
thJA
DS
GS
AS
D
S
D
stg
g
and UIS Tested
®
Gen IV Power MOSFET
Typical
1.6
20
- 55 to 150
+ 20, - 16
33.3
26.6
4.5
3.2
Limit
62.5
5
260
40
40
40
30
80
20
20
40
b, c
b, c
b, c
g
g
b, c
b, c
g
Maximum
25
Vishay Siliconix
2
www.vishay.com/doc?91000
G
SiRA06DP
N-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
D
S
mJ
°C
W
V
A
1

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SIRA06DP-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: SiRA06DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiRA06DP Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... C iss 3200 C 2400 oss 1600 800 C rss 1.7 1.5 1.3 1.1 0.9 0 On-Resistance vs. Junction Temperature pmostechsupport@vishay.com This document is subject to change without notice. SiRA06DP Vishay Siliconix = 25 ° 125 ° ° 1.0 2.0 3.0 4.0 5 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SiRA06DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 10 = 150 ° ° 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 0 250 μ 0 100 T - Temperature (°C) J Threshold Voltage 100 10 1 0.1 0.01 www.vishay.com For technical questions, contact: ...

Page 5

... Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper pmostechsupport@vishay.com This document is subject to change without notice. SiRA06DP Vishay Siliconix 150 100 125 150 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com www.vishay.com/doc?91000 ...

Page 6

... SiRA06DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.01 0.0001 0.001 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

PowerPAK SO-8, (SINGLE/DUAL Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. MIN. A 0.97 A1 0.00 b ...

Page 8

... PowerPAK thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Sili- conix MOSFETs. Click on the PowerPAK SO-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package. ...

Page 9

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 24 mils. This matches the spacing of the two drain pads on the Pow- erPAK SO-8 dual package ...

Page 10

THERMAL PERFORMANCE Introduction A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, Rθ junction-to-foot thermal resistance, Rθ is measured for the device mounted to an infinite heat sink and is therefore a characterization of the device ...

Page 11

AN821 Vishay Siliconix SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET r with temperature (Figure 7). DS(on) On-Resistance vs. Junction Temperature 1 1.6 I ...

Page 12

RECOMMENDED MINIMUM PADS FOR PowerPAK 0.024 (0.61) 0.026 (0.66) 0.050 (1.27) Return to Index Return to Index Document Number: 72599 Revision: 21-Jan-08 ® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.032 (0.82) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 ...

Page 13

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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