SIRA06DP-T1-GE3 Vishay/Siliconix, SIRA06DP-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SIRA06DP-T1-GE3
• Description: MOSFET 30V 2.5mOhm@10V 40A N-Ch G-IV
• Manufacturer: Vishay/Siliconix

Specifications of SIRA06DP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 40 A
• Resistance Drain-source Rds (on): 2.5 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 27.7 W
• Part # Aliases: SIRA06DP-GE3

SiRA06DP
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
GS(th)
DS
rss
/C
Temperature Coefficient
iss
Temperature Coefficient
Ratio
b
a
a
a
J
= 25 °C, unless otherwise noted)
a
For technical questions, contact:
V
Symbol
V
R
V
This document is subject to change without notice.
GS(th)
I
t
t
t
t
I
C
Q
I
DS(on)
V
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
I
DS
g
Q
Q
R
SM
I
t
t
t
t
t
DS
oss
oss
t
t
SD
iss
rss
S
rr
fs
gs
gd
a
b
r
f
r
f
rr
g
g
/T
/T
J
J
New Product
V
I
V
V
I
V
D
D
DS
DS
DS
DS
V
 10 A, V
 10 A, V
I
DS
F
= 15 V, V
= 30 V, V
= 15 V, V
V
= 15 V, V
V
V
V
V
V
V
= 10 A, dI/dt = 100 A/µs,
V
V
V
DS
= 0 V, V
DD
DD
GS
DS
DS
DS
GS
GS
DS
Test Conditions
[e-mail]
= V
= 15 V, R
= 15 V, R
= 0 V, I
= 30 V, V
5 V, V
= 4.5 V, I
= 15 V, V
= 10 V, I
= 10 V, I
I
T
T
D
f = 1 MHz
GEN
GEN
C
GS
I
J
= 250 µA
GS
S
GS
GS
GS
GS
= 25 °C
= 25 °C
= 5 A
, I
= 4.5 V, R
= 4.5 V, I
= 10 V, R
= 0 V, T
= 10 V, I
D
= 0 V, f = 1 MHz
D
= + 20, - 16 V
GS
= 250 µA
D
D
GS
D
L
L
= 250 µA
GS
= 15 A
= 15 A
= 1.5 
= 1.5 
= 10 V
= 10 A
= 0 V
= 0 V
J
D
D
= 55 °C
g
g
= 10 A
= 10 A
= 1 
= 1 
Min.
1.1
0.3
30
40
0.00205
0.00275
S12-2118-Rev. B, 03-Sep-12
0.022
3595
1040
Typ.
- 5.5
22.5
30.5
1.25
0.73
105
8.6
14
79
51
12
10
30
24
17
25
10
36
24
16
20
4
8
Document Number: 63715
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0.0025
0.0035
± 100
0.044
Max.
2.2
2.5
1.1
10
77
34
24
20
60
16
48
34
50
20
40
80
70
48
1
mV/°C
Unit
nA
µA
nC
nC
pF
ns
ns
ns


V
V
A
S
A
V