SIRA06DP-T1-GE3 Vishay/Siliconix, SIRA06DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIRA06DP-T1-GE3
• Description: MOSFET 30V 2.5mOhm@10V 40A N-Ch G-IV
• Manufacturer: Vishay/Siliconix

Specifications of SIRA06DP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 40 A
• Resistance Drain-source Rds (on): 2.5 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 27.7 W
• Part # Aliases: SIRA06DP-GE3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 63715
S12-2118-Rev. B, 03-Sep-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.0040
0.0034
0.0028
0.0022
0.0016
0.0010
80
64
48
32
16
10
0
8
6
4
2
0
0.0
0
0
V
DS
I
D
= 10 V
= 10 A
On-Resistance vs. Drain Current
0.5
11
16
V
V
GS
DS
Output Characteristics
= 10 V thru 4 V
- Drain-to-Source Voltage (V)
Q
V
g
I
DS
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
= 15 V
1.0
22
V
32
GS
V
= 4.5 V
GS
= 10 V
1.5
33
48
V
For technical questions, contact:
DS
= 20 V
V
GS
2.0
44
64
= 3 V
V
This document is subject to change without notice.
GS
= 2 V
2.5
80
55
New Product
[e-mail]
4000
3200
2400
1600
800
1.7
1.5
1.3
1.1
0.9
0.7
10
8
6
4
2
0
0
- 50 - 25
0.0
0
C
oss
C
C
On-Resistance vs. Junction Temperature
rss
iss
I
D
T
C
= 15 A
5
= 125 °C
1.0
T
V
V
C
DS
GS
= 25 °C
Transfer Characteristics
0
T
- Drain-to-Source Voltage (V)
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
10
Capacitance
25
2.0
15
50
V
GS
3.0
75
= 10 V
Vishay Siliconix
20
www.vishay.com/doc?91000
T
C
= - 55 °C
100
SiRA06DP
4.0
V
GS
25
www.vishay.com
= 4.5 V
125
5.0
30
150
3