SIRA06DP-T1-GE3 Vishay/Siliconix, SIRA06DP-T1-GE3 Datasheet - Page 12

• Manufacturer Part Number: SIRA06DP-T1-GE3
• Description: MOSFET 30V 2.5mOhm@10V 40A N-Ch G-IV
• Manufacturer: Vishay/Siliconix

Specifications of SIRA06DP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 40 A
• Resistance Drain-source Rds (on): 2.5 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 27.7 W
• Part # Aliases: SIRA06DP-GE3

RECOMMENDED MINIMUM PADS FOR PowerPAK
Document Number: 72599
Revision: 21-Jan-08
Return to Index
Return to Index
0.024
(0.61)
0.026
(0.66)
(1.27)
0.050
0.032
(0.82)
Recommended Minimum Pads
Dimensions in Inches/(mm)
®
SO-8 Single
0.260
(6.61)
0.150
(3.81)
Application Note 826
(1.02)
0.040
Vishay Siliconix
www.vishay.com
15